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We have seen that when an entire piece of n-type semiconductor is under constant illumination by a light source which creates electron-hole pairs at a rate gop throughout the semiconductor, the steady-state minority carrier concentration (i.e., hole concentration p) is given by p = - JopTp, where Tp is the hole carrier lifetime. Assume a silicon sample is doped with a concentration ND = 10¹5 cm³ of shallow donors. Prior to time t = : 0, the sample is at thermal equilibrium. Starting at time t = 0, the sample is illuminated constantly by a light source which generates electron-hole pairs at a rate gop = 10¹6 EHP/(cm³.s) throughout the sample. If the hole carrier lifetime Tp = 1 µs, calculate (a) the steady-state hole concentration Pfin, (b) the time required for p to increase from its equilibrium value to (0.1)pfin, and (c) the time required for p to increase from its equilibrium value to (0.9)Pƒin·

We have seen that when an entire piece of n-type semiconductor is under constant illumination by a light source which creates electron-hole pairs at a rate gop throughout the semiconductor, the steady-state minority carrier concentration (i.e., hole concentration p) is given by p = - JopTp, where Tp is the hole carrier lifetime. Assume a silicon sample is doped with a concentration ND = 10¹5 cm³ of shallow donors. Prior to time t = : 0, the sample is at thermal equilibrium. Starting at time t = 0, the sample is illuminated constantly by a light source which generates electron-hole pairs at a rate gop = 10¹6 EHP/(cm³.s) throughout the sample. If the hole carrier lifetime Tp = 1 µs, calculate (a) the steady-state hole concentration Pfin, (b) the time required for p to increase from its equilibrium value to (0.1)pfin, and (c) the time required for p to increase from its equilibrium value to (0.9)Pƒin·

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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We have seen that when an entire piece of n-type semiconductor is under constant illumination by a light source which creates electron-hole pairs at a rate gop throughout the semiconductor, the steady-state minority carrier concentration (i.e., hole concentration p) is given by p = 9opp, where Tp is the hole carrier lifetime. Assume a silicon sample is doped with a concentration ND = 10¹5 cm-³ of shallow donors. Prior to time t = 0, the sample is at thermal equilibrium. Starting at time t = 0, the sample is illuminated constantly by a light source which generates electron-hole pairs at a rate gop = 10¹6 EHP/(cm³.s) throughout the sample. If the hole carrier lifetime Tp 1 µs, calculate (a) the steady-state hole = concentration Pfin, (b) the time required for p to increase from its equilibrium value to (0.1)pfin, and (c) the time required for p to increase from its equilibrium value to (0.9)Pfin.
Transcribed Image Text:We have seen that when an entire piece of n-type semiconductor is under constant illumination by a light source which creates electron-hole pairs at a rate gop throughout the semiconductor, the steady-state minority carrier concentration (i.e., hole concentration p) is given by p = 9opp, where Tp is the hole carrier lifetime. Assume a silicon sample is doped with a concentration ND = 10¹5 cm-³ of shallow donors. Prior to time t = 0, the sample is at thermal equilibrium. Starting at time t = 0, the sample is illuminated constantly by a light source which generates electron-hole pairs at a rate gop = 10¹6 EHP/(cm³.s) throughout the sample. If the hole carrier lifetime Tp 1 µs, calculate (a) the steady-state hole = concentration Pfin, (b) the time required for p to increase from its equilibrium value to (0.1)pfin, and (c) the time required for p to increase from its equilibrium value to (0.9)Pfin.
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