With regard ton-type extrinsic semiconductors, which one of the following explanations is not correct? O a. Maximum "extrinsic" conductivity is reached when all the extra electrons are ionized. O b. The temperature interval where the maximum extrinsic conductivity is reached is called as "Extrinsic (or depleted) region". O c. At high temperatures, it can show "intrinsic" behavior. O d. Additional conductivity can be obtained if the thermal energy is increased. O e. An acceptor state is created close to valance band.
With regard ton-type extrinsic semiconductors, which one of the following explanations is not correct? O a. Maximum "extrinsic" conductivity is reached when all the extra electrons are ionized. O b. The temperature interval where the maximum extrinsic conductivity is reached is called as "Extrinsic (or depleted) region". O c. At high temperatures, it can show "intrinsic" behavior. O d. Additional conductivity can be obtained if the thermal energy is increased. O e. An acceptor state is created close to valance band.
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With regard to the n-type extrinsic semiconductors, which one of the following explanations is not correct?
Transcribed Image Text:With regard to n-type extrinsic semiconductors, which one of the following explanations is not correct?
O a. Maximunm "extrinsic" conductivity is reached when all the extra electrons are ionized.
O b. The temperature interval where the maximum extrinsic conductivity is reached is called as "Extrinsic (or depleted)
region"
O c. At high temperatures, it can show "intrinsic" behavior.
d. Additional conductivity can be obtained if the thermal energy is increased.
e. An acceptor state is created close to valance band.
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