True or false a.A p-n junction has a variable capacitance depending on bias. b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias. c.Diffusion capacitance is zero if the diode length is longer than the diffusion length. d.We can accurately predict the energy and time of an electron. e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers f.For an Schottky contact there is a higher concentration of majority carriers at the interface g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement mode
True or false
a.A p-n junction has a variable capacitance depending on bias.
b.n a depletion mode MOSFET the channel is created by implantation of ions not gate bias.
c.Diffusion capacitance is zero if the diode length is longer than the diffusion length.
d.We can accurately predict the energy and time of an electron.
e.. Avalanche breakdown occurs if the potential barrier is narrow, allowing for tunneling of carriers
f.For an Schottky contact there is a higher concentration of majority carriers at the interface
g.Current can flow between source and drain with a gate bias, VG=0 in an enhancement mode
MOSFET.
h.To achieve forward active mode in an NPN bipolar junction transistor, the base-emitter voltage must be forward biased and the base-collector voltage must be reverse biased to ensure that
electrons from the emitter make it to the collector.
i.The Early Effect causes a decrease in IC with increased VC as the depletion region from the collector extends significantly into the base
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