materials can be made into light emitting diodes (LEDs). ii. All semiconductor materials can be made into lasers. i. All semiconductor iii. The intrinsic carrier concentration in a semiconductor depends on the temperature. iv. As the temperature increases, the electron concentration in a p-type semiconductor incre

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The following statements refer to semiconductor materials and devices:
i. All semiconductor materials can be made into light emitting diodes (LEDs).
ii. All semiconductor materials can be made into lasers.
iii. The intrinsic carrier concentration in a semiconductor depends on the temperature.
iv. As the temperature increases, the electron concentration in a p-type semiconductor increases.
v. Light with energy greater than the band-gap of a semiconductor is necessary to create electron-hole pairs in the semiconductor.
vi. Acceptors in a semiconductor give rise to free electrons.
Which of the following statements is correct:
(i) and (iii) are both FALSE
(i) and (iv) are both FALSE
(i) and (vi) are both FALSE
(ii) and (iv) are both FALSE
Transcribed Image Text:The following statements refer to semiconductor materials and devices: i. All semiconductor materials can be made into light emitting diodes (LEDs). ii. All semiconductor materials can be made into lasers. iii. The intrinsic carrier concentration in a semiconductor depends on the temperature. iv. As the temperature increases, the electron concentration in a p-type semiconductor increases. v. Light with energy greater than the band-gap of a semiconductor is necessary to create electron-hole pairs in the semiconductor. vi. Acceptors in a semiconductor give rise to free electrons. Which of the following statements is correct: (i) and (iii) are both FALSE (i) and (iv) are both FALSE (i) and (vi) are both FALSE (ii) and (iv) are both FALSE
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