A silicon semiconductor material is to be designed such that the majority carrier electron concentration is no 7 x 10¹5 cm3 at T = 300K. a) Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron concentration? b) What concentration of dopant impurity atoms is required? c) In this silicon material, the minority carrier hole concentration is to be no larger than po = 106 cm³, determine the maximum allowable temperature.

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A silicon semiconductor material is to be designed such that the majority carrier electron concentration
is no 7 x 10¹5 cm3 at T = 300K.
a) Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron
concentration?
b) What concentration of dopant impurity atoms is required?
c) In this silicon material, the minority carrier hole concentration is to be no larger than po = 106 cm³,
determine the maximum allowable temperature.
Transcribed Image Text:A silicon semiconductor material is to be designed such that the majority carrier electron concentration is no 7 x 10¹5 cm3 at T = 300K. a) Should donor or acceptor impurity atoms be added to intrinsic silicon to achieve this electron concentration? b) What concentration of dopant impurity atoms is required? c) In this silicon material, the minority carrier hole concentration is to be no larger than po = 106 cm³, determine the maximum allowable temperature.
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