Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
9th Edition
ISBN: 9781259989452
Author: Hayt
Publisher: Mcgraw Hill Publishers
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Chapter 5, Problem 21E
To determine
Simplify the circuit and find the value of voltage
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A Darlington Pair consists of two transistors with the first BJT driving the base terminal of the second transistor as shown in the picture provided. What does the curve trace for a Darlington Pair of Bipolar Junction Transistors look like?
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Chapter 5 Solutions
Loose Leaf for Engineering Circuit Analysis Format: Loose-leaf
Ch. 5.1 - For the circuit of Fig. 5.4, use superposition to...Ch. 5.2 - For the circuit of Fig. 5.7, use superposition to...Ch. 5.2 - For the circuit of Fig. 5.18, compute the current...Ch. 5.2 - For the circuit of Fig. 5.20, compute the voltage...Ch. 5.3 - Using repeated source transformations, determine...Ch. 5.3 - Use Thvenins theorem to find the current through...Ch. 5.3 - Determine the Thvenin and Norton equivalents of...Ch. 5.3 - Find the Thvenin equivalent for the network of...Ch. 5.3 - Find the Thvenin equivalent for the network of...Ch. 5.4 - Consider the circuit of Fig. 5.43. FIGURE 5.43...
Ch. 5.5 - Prob. 11PCh. 5 - Linear systems are so easy to work with that...Ch. 5 - Prob. 2ECh. 5 - Prob. 3ECh. 5 - (a) Employ superposition to determine the current...Ch. 5 - (a) Using superposition to consider each source...Ch. 5 - (a) Determine the individual contributions of each...Ch. 5 - (a) Determine the individual contributions of each...Ch. 5 - After studying the circuit of Fig. 5.53, change...Ch. 5 - Consider the three circuits shown in Fig. 5.54....Ch. 5 - (a) Using superposition, determine the voltage...Ch. 5 - Employ superposition principles to obtain a value...Ch. 5 - (a) Employ superposition to determine the...Ch. 5 - Perform an appropriate source transformation on...Ch. 5 - (a) For the circuit of Fig. 5.59, plot iL versus...Ch. 5 - Determine the current labeled I in the circuit of...Ch. 5 - Verify that the power absorbed by the 7 resistor...Ch. 5 - (a) Determine the current labeled i in the circuit...Ch. 5 - (a) Using repeated source transformations, reduce...Ch. 5 - Prob. 19ECh. 5 - (a) Making use of repeated source transformations,...Ch. 5 - Prob. 21ECh. 5 - (a) With the assistance of source transformations,...Ch. 5 - For the circuit in Fig. 5.67 transform all...Ch. 5 - Prob. 24ECh. 5 - (a) Referring to Fig. 5.69, determine the Thevenin...Ch. 5 - (a) With respect to the circuit depicted in Fig....Ch. 5 - (a) Obtain the Norton equivalent of the network...Ch. 5 - (a) Determine the Thevenin equivalent of the...Ch. 5 - Referring to the circuit of Fig. 5.71: (a)...Ch. 5 - Prob. 30ECh. 5 - (a) Employ Thvenins theorem to obtain a...Ch. 5 - Prob. 32ECh. 5 - Determine the Norton equivalent of the circuit...Ch. 5 - For the circuit of Fig. 5.75: (a) Employ Nortons...Ch. 5 - (a) Obtain a value for the Thvenin equivalent...Ch. 5 - Prob. 36ECh. 5 - Obtain a value for the Thvenin equivalent...Ch. 5 - With regard to the network depicted in Fig. 5.79,...Ch. 5 - Determine the Thvenin and Norton equivalents of...Ch. 5 - Determine the Norton equivalent of the circuit...Ch. 5 - Prob. 41ECh. 5 - Determine the Thvenin and Norton equivalents of...Ch. 5 - Prob. 43ECh. 5 - Prob. 44ECh. 5 - Prob. 45ECh. 5 - (a) For the simple circuit of Fig. 5.87, find the...Ch. 5 - For the circuit drawn in Fig. 5.88, (a) determine...Ch. 5 - Study the circuit of Fig. 5.89. (a) Determine the...Ch. 5 - Prob. 49ECh. 5 - Prob. 50ECh. 5 - With reference to the circuit of Fig. 5.91, (a)...Ch. 5 - Prob. 52ECh. 5 - Select a value for RL in Fig. 5.93 such that it...Ch. 5 - Determine what value of resistance would absorb...Ch. 5 - Derive the equations required to convert from a...Ch. 5 - Convert the - (or "-") connected networks in Fig....Ch. 5 - Convert the Y-(or T-) connected networks in Fig....Ch. 5 - For the network of Fig. 5.97, select a value of R...Ch. 5 - For the network of Fig. 5.98, select a value of R...Ch. 5 - Prob. 60ECh. 5 - Calculate Rin as indicated in Fig.5.100. FIGURE...Ch. 5 - Employ Y conversion techniques as appropriate to...Ch. 5 - Prob. 63ECh. 5 - (a) Use appropriate techniques to obtain both the...Ch. 5 - (a) For the network in Fig. 5.104, replace the...Ch. 5 - Prob. 66ECh. 5 - Prob. 67ECh. 5 - A 2.57 load is connected between terminals a and...Ch. 5 - A load resistor is connected across the open...Ch. 5 - A backup is required for the circuit depicted in...Ch. 5 - (a) Explain in general terms how source...Ch. 5 - The load resistor in Fig. 5.108 can safely...Ch. 5 - Prob. 74ECh. 5 - As part of a security system, a very thin 100 ...Ch. 5 - With respect to the circuit in Fig. 5.90, (a)...
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- What is the equivalent resistance of this circuit between terminals A and B ? m 1852 A 7_A 122 도 www 50 ти B ww 36 Ω 201 www www 30√arrow_forward3) A circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine V2, V2, I₂, I₂ and Is © For each circuit element determine how much power it Supplies 15 absorbs. m 20 + 20 www 13 + 20 Z9V H 56 +1 LOV 1/2 1 4A + 3_22 3.2 ми + V₂ I 1arrow_forwardIn this experiment, we are going to use a 2N3904 BJT. Examine the data sheet for this device carefully. In particular, make a note of the current gain (identified by hFE). 1. Obtain the curve trace for a "Darlington Pair" of Bipolar Junction Transistors. A Darlington Pair consists of two transistors with the first BJT driving the base terminal of the second transistor as shown in Figure 1 below. A. Set up the primary sweep voltages for V1 the same as shown in the lecture notes (see the Darlington pair IV curve). B. Set up the secondary sweep currents for 11 to be an order of magnitude smaller than for the single BJT. In the Sweep Type box choose linear and enter the following 3 values: Start Value: 0, End Value: 8u and Increment: 1u (see lecture notes). C. Describe the primary differences you observe between the single BJT Curve Trace and that of the Darlington Pair. Discuss what might cause each difference. Q1 11 Q2 V1 Q2N3904 Figure 1. A Darlington Pair of 2N3904 transistors in a…arrow_forward
- 2. Using the IV plots shown in Fig. 3 (and found in the reintroduction to PSpice) design a BJT biasing circuit that results in the following parameters: VCE = 2 Vand ig = 40 μA. We also require the power supply to be fixed at 5 Volts (this is where the load line intercepts the iB =ic = 0 line). You may use the circuit shown in Example 1. Note that all resistor values in Example 1 must be recalculated. Your solution for the base to ground and base to collector resistors may not be unique.arrow_forwardA circuit is given as shown. (a) Find and label the circuit nodes. (6) Determine I, I₁, I2 and V₂ I₂ +1 I 12V ww 22 2 ти + 보통 162 - ти 4 52 12 50 602 I 1 Mwarrow_forwarda) A silicon wafer is uniformly doped p-type with NA=10¹³/cm³. At T=0K, what are the equilibrium hole and electron concentrations?arrow_forward
- 1016 1015 Ge 101 Si 1013 1012 GaAs 10" (( uວ) uot¤ງແລ້ວuo ວາ.ຂ ວາsuuuT 0101 601 801 107 10% Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the following conditions. (n; =1010/cm³ at 300K) a) T 300 K, NA << ND, ND = 1015/cm³ b) T 300 K, NA = 9X1015/cm³, ND = 1016/cm³ c) T = 450 K, NA = 0, ND = 1014/cm³ d) T = 650 K, NA = 0, ND = 1014/cm³ 10° 200 300 400 500 600 700 T(K)arrow_forwardb) A semiconductor is doped with an impurity concentration N such that N >> n; and all the impurities are ionized. Also, n = N and p = n2/N. Is the impurity a donor or an acceptor? Explain.arrow_forwardd) For a silicon sample maintained at T=300K, the Fermi level is located 0.259 eV above the intrinsic Fermi level. What are the hole and electron concentrations?arrow_forward
- e) In a nondegenerate germanium sample maintained under equilibrium conditions near room temperature, it is known that n=10¹³/cm³, n = 2p, and NA 0. Determine n and ND.arrow_forwardSolve fo the voltage across the 1kohm resistor using superposition for the three following cases: only V1 present, only V2 present, and both V1 and V2 present.arrow_forwardSemiconductor A has a band gap of 1eV, while semiconductor B has a band gap of 2eV. What is the ration of the intrinsic carrier concentrations in the two materials (n₁A/NB) at 300 K. Assume any differences in the carrier effective masses may be neglected.arrow_forward
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