MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
expand_more
expand_more
format_list_bulleted
Concept explainers
Videos
Textbook Question
Chapter 4, Problem 4.30P
The small−signal parameters of an enhancement−mode MOSFET source follower are
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Determine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.
A stabilization circuit has a stability factor of 0.04 and an internal
resistance of 5 2. The unstabilized voltage can vary between 75 and
100 V, and the load current can vary from 40 to 80 mA. Determine
the maximum and minimum values for the stabilized load voltage.
Q-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4
mA and Vm = 2 V.
+15V
Rp-
2k
4M
R1
+
Vps
2M
R2
Chapter 4 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 4 - Prob. 4.1EPCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - Prob. 4.1TYUCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - For the circuit in Figure 4.1, the circuit and...Ch. 4 - The parameters for the circuit in Figure 4.8 are...Ch. 4 - A transistor has the same parameters as those...Ch. 4 - The parameters of the circuit shown in Figure 4.14...Ch. 4 - Consider the circuit shown in Figure 4.14. Assume...Ch. 4 - For the circuit shown in Figure 4.19, the...
Ch. 4 - The commonsource amplifier in Figure 4.23 has...Ch. 4 - Consider the commonsource amplifier in Figure 4.24...Ch. 4 - The parameters of the transistor shown in Figure...Ch. 4 - The sourcefollower circuit in Figure 4.26 has...Ch. 4 - The circuit and transistor parameters for the...Ch. 4 - Consider the circuit shown in Figure 4.28 with...Ch. 4 - Prob. 4.8TYUCh. 4 - The transistor in the sourcefollower circuit shown...Ch. 4 - Consider the circuit shown in Figure 4.35 with...Ch. 4 - For the circuit shown in Figure 4.32, the circuit...Ch. 4 - The bias voltage for the enhancementload amplifier...Ch. 4 - Assume the depletionload amplifier in Figure...Ch. 4 - For the circuit shown in Figure 4.45(a), assume...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - For the enhancement load amplifier shown in Figure...Ch. 4 - For the cascade circuit shown in Figure 4.49, the...Ch. 4 - The transistor parameters of the NMOS cascode...Ch. 4 - The transistor parameters of the circuit in Figure...Ch. 4 - Reconsider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.13TYUCh. 4 - For the circuit shown in Figure 4.59, the...Ch. 4 - Discuss, using the concept of a load line, how a...Ch. 4 - How does the transistor widthtolength ratio affect...Ch. 4 - Discuss the physical meaning of the smallsignal...Ch. 4 - Prob. 4RQCh. 4 - Prob. 5RQCh. 4 - Discuss the general conditions under which a...Ch. 4 - Why, in general, is the magnitude of the voltage...Ch. 4 - What are the changes in dc and ac characteristics...Ch. 4 - Sketch a simple sourcefollower amplifier circuit...Ch. 4 - Sketch a simple commongate amplifier circuit and...Ch. 4 - Prob. 11RQCh. 4 - Prob. 12RQCh. 4 - State the advantage of using transistors in place...Ch. 4 - Prob. 14RQCh. 4 - An NMOS transistor has parameters VTN=0.4V ,...Ch. 4 - A PMOS transistor has parameters VTP=0.6V ,...Ch. 4 - An NMOS transistor is biased in the saturation...Ch. 4 - The minimum value of smallsignal resistance of a...Ch. 4 - An nchannel MOSFET is biased in the saturation...Ch. 4 - The value of for a MOSFET is 0.02V1 . (a) What is...Ch. 4 - Prob. 4.7PCh. 4 - The parameters of the circuit in Figure 4.1 are...Ch. 4 - The circuit shown in Figure 4.1 has parameters...Ch. 4 - For the circuit shown in Figure 4.1, the...Ch. 4 - In our analyses, we assumed the smallsignal...Ch. 4 - Using the results of Problem 4.11, find the peak...Ch. 4 - Consider the circuit in Figure 4.14 in the text....Ch. 4 - A commonsource amplifier, such as shown in Figure...Ch. 4 - For the NMOS commonsource amplifier in Figure...Ch. 4 - The parameters of the circuit shown in Figure...Ch. 4 - Repeat Problem 4.15 if the source resistor is...Ch. 4 - The ac equivalent circuit of a commonsource...Ch. 4 - Consider the ac equivalent circuit shown in Figure...Ch. 4 - The transistor in the commonsource amplifier in...Ch. 4 - The parameters of the MOSFET in the circuit shown...Ch. 4 - For the commonsource amplifier in Figure P4.22,...Ch. 4 - The transistor in the commonsource circuit in...Ch. 4 - Prob. 4.24PCh. 4 - For the commonsource circuit in Figure P4.24, the...Ch. 4 - Design the common-source circuit in Figure P4.26...Ch. 4 - For the commonsource amplifier shown in Figure...Ch. 4 - For the circuit shown in Figure P4.28, the...Ch. 4 - Design a commonsource amplifier, such as that in...Ch. 4 - The smallsignal parameters of an enhancementmode...Ch. 4 - The opencircuit (RL=) voltage gain of the ac...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - The source follower amplifier in Figure P4.33 is...Ch. 4 - Consider the circuit in Figure P4.34. The...Ch. 4 - The quiescent power dissipation in the circuit in...Ch. 4 - The parameters of the circuit in Figure P4.36 are...Ch. 4 - Consider the source follower circuit in Figure...Ch. 4 - For the sourcefollower circuit shown in Figure...Ch. 4 - In the sourcefollower circuit in Figure P4.39 with...Ch. 4 - For the circuit in Figure P4.39, RS=1k and the...Ch. 4 - Prob. D4.41PCh. 4 - The current source in the sourcefollower circuit...Ch. 4 - Consider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.44PCh. 4 - Figure P4.45 is the ac equivalent circuit of a...Ch. 4 - The transistor in the commongate circuit in Figure...Ch. 4 - The smallsignal parameters of the NMOS transistor...Ch. 4 - For the commongate circuit in Figure P4.48, the...Ch. 4 - Consider the PMOS commongate circuit in Figure...Ch. 4 - The transistor parameters of the NMOS device in...Ch. 4 - The parameters of the circuit shown in Figure 4.32...Ch. 4 - For the commongate amplifier in Figure 4.35 in the...Ch. 4 - Consider the NMOS amplifier with saturated load in...Ch. 4 - For the NMOS amplifier with depletion load in...Ch. 4 - Consider a saturated load device in which the gate...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - A sourcefollower circuit with a saturated load is...Ch. 4 - For the sourcefollower circuit with a saturated...Ch. 4 - The transistor parameters for the commonsource...Ch. 4 - Consider the circuit in Figure P4.60. The...Ch. 4 - The ac equivalent circuit of a CMOS commonsource...Ch. 4 - Consider the ac equivalent circuit of a CMOS...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - Figure P4.65 shows a commongate amplifier. The...Ch. 4 - The ac equivalent circuit of a CMOS commongate...Ch. 4 - The circuit in Figure P4.67 is a simplified ac...Ch. 4 - Prob. 4.68PCh. 4 - The transistor parameters in the circuit in Figure...Ch. 4 - Consider the circuit shown in Figure P4.70. The...Ch. 4 - For the circuit in Figure P4.71, the transistor...Ch. 4 - For the cascode circuit in Figure 4.51 in the...Ch. 4 - The supply voltages to the cascode circuit in...Ch. 4 - Consider the JFET amplifier in Figure 4.53 with...Ch. 4 - For the JFET amplifier in Figure P4.75, the...Ch. 4 - The parameters of the transistor in the JFET...Ch. 4 - Consider the sourcefollower WET amplifier in...Ch. 4 - For the pchannel JFET sourcefollower circuit in...Ch. 4 - The pchannel JFET commonsource amplifier in Figure...Ch. 4 - Prob. 4.82CSPCh. 4 - A discrete commonsource circuit with the...Ch. 4 - Consider the commongate amplifier shown in Figure...Ch. 4 - A sourcefollower amplifier with the configuration...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- Ansarrow_forwardLabel properly the required final circuit and DC loadline. Complete the given BJT circuit. Solve for the value of the resistors and voltage supply that will satisfy the given loadlinearrow_forward04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)arrow_forward
- Q. Choose the correct answer from the following: 2. A three-phase half-wave controlled converter is constructed using 3 SCR devices. The circuit is supplying an R load with a< 30°. As such, each SCR device would conduct for a) 60° each cycle b) 120° each cycle c) 180° each cycle d) 360° each cycle 4. A thyristor has a maximum allowable junction temperature of 120°C and the ambient temperature is 40°C. If thermal resistance is 1.6° C/W, the maximum allowable internal power dissipation is: a. 20 W b. 50 W c. 92 W d. 128 W 6. In reverse blocking state of a thyristor: a) junction J2 is in reverse bias and J1, J3 is in forward bias. b) junction J3 is in forward bias and J1, J2 in reverse bias. c) junction J1, J3 is in reverse bias and J2 is in forward bias. d) junction J1 and J2 is in forward bias and J3 is in reverse bias.arrow_forwardiv) dc collector to emitter base voltage, VEca v) dc base voltage, VB vi) dc collector voltage, Vc vii) dc emitter voltage, VE and viii) dc base collector voltage, Vsc. ix) ac and dc loadline by using appropriate sketches x) maximum output swing, Vo max. Given : VEB = 0.7V and ß = 100. 12 V 82k 3k3 C. o Vo Vi o H 1k0 39k CE Figure Q3barrow_forwardThe circuit shown in the following in figure has: VIN= 10 V, Vz = 7.2 V@ Iz-40 mA, Izk =2 mA, IzM= 100 mA and Zz-5 2. Determine a) Maximum output voltage. b) Minimum output voltage. c) The percentage load regulation. d) The minimum permissible load resistor value. c) The maximum permissible load resistor value. R 2211 VISarrow_forward
- A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardThe term "Bipolar" in Bipolar Junction Transistor (BJT) refers to 5 Ja) Two junctions c) Two polarity carriers (electrons & holes) b) Two Diodes d) Two resistances negative of dinda b' nositivoarrow_forwardQ2 Design a voltage divider bias circuit for an npn silicon transistor having B %D 100 to be used in a Common Emitter configuration. The quiescent point = 1 mA, VCE = 5 V. The supply voltage (Vcc) is 15 V. (Q point) is to be l. Assume VĘ = 0.1Vcc and BRĘ 2 10R2. (a)Find all the resistors values and draw the schematic diagram of this Common Emitter Amplifier with bypass capacitor CE.arrow_forward
- Solve asap.arrow_forwardAssume VRE 0.7 V and B-50 for the transistor in the circuit shown in the figure. For VCE = 2 V, the value of Rg is RB m B +12 V www Rc- 5 k C E VCEarrow_forwardGiven the emitter follower schematic below and the following information: Vi = 2V β = 100 VCE,Sat = 0V VBE,On = 0.7V VFWD = 0.7V (Forward voltage of diode) Determine the values of VB (Base Voltage) and V0 (Output/Emitter Voltage).Also, determine the state of operation of the BJT and the diode.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
What is a Power Amplifier, And Do I Need One?; Author: Sweetwater;https://www.youtube.com/watch?v=2wkmSm4V00M;License: Standard Youtube License