MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
expand_more
expand_more
format_list_bulleted
Textbook Question
Chapter 4, Problem 4.62P
Consider the ac equivalent circuit of a CMOS common−source amplifier shown in Figure P4.62. The parameters of the NMOS and PMOS transistors are the same as given in Problem 4.61. Determine the small−signal voltage gain.
Figure P4.62
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solutionStudents have asked these similar questions
4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor
parameters are: VIN = 0.8 V, K, =I mA/V², and à = 0. The circuit para-
meters are VpD = 5 V, Rs = 1 k2, Rp = 4 k2, R = 225 k2. and
R2 = 175 k2. (a) Calculate the quiescent values Ipo and Vpso. (b) Deter-
mine the small-signal voltage gain for Ri = 00. (c) Determine the value of
RL that will reduce the small-signal voltage gain to 75 percent of the value
found in part (b).
VpD
Figure P4.15
ww
ww
4.15 For the NMOS common-source amplifier in Figure P4.15, the transistor
parameters are: VTN = 0.8 V, K, = 1 mA/V², and 2 = 0. The circuit para-
meters are VDD = 5 V, Rs = 1 k2, Rp = 4k2, R1 = 225 k2, and
R2 = 175 k2. (a) Calculate the quiescent values Ipo and VpsQ. (b) Deter-
mine the small-signal voltage gain for R1 = 0. (c) Determine the value of
Rị that will reduce the small-signal voltage gain to 75 percent of the value
found in part (b).
VDD
Rp
Rin
Cc2
Cci
Figure P4.15
Explain all the steps
Chapter 4 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 4 - Prob. 4.1EPCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - Prob. 4.1TYUCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - For the circuit in Figure 4.1, the circuit and...Ch. 4 - The parameters for the circuit in Figure 4.8 are...Ch. 4 - A transistor has the same parameters as those...Ch. 4 - The parameters of the circuit shown in Figure 4.14...Ch. 4 - Consider the circuit shown in Figure 4.14. Assume...Ch. 4 - For the circuit shown in Figure 4.19, the...
Ch. 4 - The commonsource amplifier in Figure 4.23 has...Ch. 4 - Consider the commonsource amplifier in Figure 4.24...Ch. 4 - The parameters of the transistor shown in Figure...Ch. 4 - The sourcefollower circuit in Figure 4.26 has...Ch. 4 - The circuit and transistor parameters for the...Ch. 4 - Consider the circuit shown in Figure 4.28 with...Ch. 4 - Prob. 4.8TYUCh. 4 - The transistor in the sourcefollower circuit shown...Ch. 4 - Consider the circuit shown in Figure 4.35 with...Ch. 4 - For the circuit shown in Figure 4.32, the circuit...Ch. 4 - The bias voltage for the enhancementload amplifier...Ch. 4 - Assume the depletionload amplifier in Figure...Ch. 4 - For the circuit shown in Figure 4.45(a), assume...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - For the enhancement load amplifier shown in Figure...Ch. 4 - For the cascade circuit shown in Figure 4.49, the...Ch. 4 - The transistor parameters of the NMOS cascode...Ch. 4 - The transistor parameters of the circuit in Figure...Ch. 4 - Reconsider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.13TYUCh. 4 - For the circuit shown in Figure 4.59, the...Ch. 4 - Discuss, using the concept of a load line, how a...Ch. 4 - How does the transistor widthtolength ratio affect...Ch. 4 - Discuss the physical meaning of the smallsignal...Ch. 4 - Prob. 4RQCh. 4 - Prob. 5RQCh. 4 - Discuss the general conditions under which a...Ch. 4 - Why, in general, is the magnitude of the voltage...Ch. 4 - What are the changes in dc and ac characteristics...Ch. 4 - Sketch a simple sourcefollower amplifier circuit...Ch. 4 - Sketch a simple commongate amplifier circuit and...Ch. 4 - Prob. 11RQCh. 4 - Prob. 12RQCh. 4 - State the advantage of using transistors in place...Ch. 4 - Prob. 14RQCh. 4 - An NMOS transistor has parameters VTN=0.4V ,...Ch. 4 - A PMOS transistor has parameters VTP=0.6V ,...Ch. 4 - An NMOS transistor is biased in the saturation...Ch. 4 - The minimum value of smallsignal resistance of a...Ch. 4 - An nchannel MOSFET is biased in the saturation...Ch. 4 - The value of for a MOSFET is 0.02V1 . (a) What is...Ch. 4 - Prob. 4.7PCh. 4 - The parameters of the circuit in Figure 4.1 are...Ch. 4 - The circuit shown in Figure 4.1 has parameters...Ch. 4 - For the circuit shown in Figure 4.1, the...Ch. 4 - In our analyses, we assumed the smallsignal...Ch. 4 - Using the results of Problem 4.11, find the peak...Ch. 4 - Consider the circuit in Figure 4.14 in the text....Ch. 4 - A commonsource amplifier, such as shown in Figure...Ch. 4 - For the NMOS commonsource amplifier in Figure...Ch. 4 - The parameters of the circuit shown in Figure...Ch. 4 - Repeat Problem 4.15 if the source resistor is...Ch. 4 - The ac equivalent circuit of a commonsource...Ch. 4 - Consider the ac equivalent circuit shown in Figure...Ch. 4 - The transistor in the commonsource amplifier in...Ch. 4 - The parameters of the MOSFET in the circuit shown...Ch. 4 - For the commonsource amplifier in Figure P4.22,...Ch. 4 - The transistor in the commonsource circuit in...Ch. 4 - Prob. 4.24PCh. 4 - For the commonsource circuit in Figure P4.24, the...Ch. 4 - Design the common-source circuit in Figure P4.26...Ch. 4 - For the commonsource amplifier shown in Figure...Ch. 4 - For the circuit shown in Figure P4.28, the...Ch. 4 - Design a commonsource amplifier, such as that in...Ch. 4 - The smallsignal parameters of an enhancementmode...Ch. 4 - The opencircuit (RL=) voltage gain of the ac...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - The source follower amplifier in Figure P4.33 is...Ch. 4 - Consider the circuit in Figure P4.34. The...Ch. 4 - The quiescent power dissipation in the circuit in...Ch. 4 - The parameters of the circuit in Figure P4.36 are...Ch. 4 - Consider the source follower circuit in Figure...Ch. 4 - For the sourcefollower circuit shown in Figure...Ch. 4 - In the sourcefollower circuit in Figure P4.39 with...Ch. 4 - For the circuit in Figure P4.39, RS=1k and the...Ch. 4 - Prob. D4.41PCh. 4 - The current source in the sourcefollower circuit...Ch. 4 - Consider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.44PCh. 4 - Figure P4.45 is the ac equivalent circuit of a...Ch. 4 - The transistor in the commongate circuit in Figure...Ch. 4 - The smallsignal parameters of the NMOS transistor...Ch. 4 - For the commongate circuit in Figure P4.48, the...Ch. 4 - Consider the PMOS commongate circuit in Figure...Ch. 4 - The transistor parameters of the NMOS device in...Ch. 4 - The parameters of the circuit shown in Figure 4.32...Ch. 4 - For the commongate amplifier in Figure 4.35 in the...Ch. 4 - Consider the NMOS amplifier with saturated load in...Ch. 4 - For the NMOS amplifier with depletion load in...Ch. 4 - Consider a saturated load device in which the gate...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - A sourcefollower circuit with a saturated load is...Ch. 4 - For the sourcefollower circuit with a saturated...Ch. 4 - The transistor parameters for the commonsource...Ch. 4 - Consider the circuit in Figure P4.60. The...Ch. 4 - The ac equivalent circuit of a CMOS commonsource...Ch. 4 - Consider the ac equivalent circuit of a CMOS...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - Figure P4.65 shows a commongate amplifier. The...Ch. 4 - The ac equivalent circuit of a CMOS commongate...Ch. 4 - The circuit in Figure P4.67 is a simplified ac...Ch. 4 - Prob. 4.68PCh. 4 - The transistor parameters in the circuit in Figure...Ch. 4 - Consider the circuit shown in Figure P4.70. The...Ch. 4 - For the circuit in Figure P4.71, the transistor...Ch. 4 - For the cascode circuit in Figure 4.51 in the...Ch. 4 - The supply voltages to the cascode circuit in...Ch. 4 - Consider the JFET amplifier in Figure 4.53 with...Ch. 4 - For the JFET amplifier in Figure P4.75, the...Ch. 4 - The parameters of the transistor in the JFET...Ch. 4 - Consider the sourcefollower WET amplifier in...Ch. 4 - For the pchannel JFET sourcefollower circuit in...Ch. 4 - The pchannel JFET commonsource amplifier in Figure...Ch. 4 - Prob. 4.82CSPCh. 4 - A discrete commonsource circuit with the...Ch. 4 - Consider the commongate amplifier shown in Figure...Ch. 4 - A sourcefollower amplifier with the configuration...
Knowledge Booster
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.Similar questions
- {1OB/s 4.ll Asiacell Untitled docu... -> Q/ Derive mathematical expression to determine the stability factors of voltage-divider bias circuit?arrow_forward4.36 The parameters of the circuit in Figure P4.36 are Rs = 4 k2, R1 = 850 k2, R2 = 350 k2, and RL = 4 k2. The transistor parameters are VTp =-1.2 V, k, = 40 µA/V², W/L = 80, and A = 0.05 V-1. (a) Determine Ipg and VSDQ. (b) Find the small-signal voltage gain A, = vo/Vj. (c) Determine the small-signal circuit transconductance gain Ag = i,/vj. (d) Find the small- signal output resistance R,. %3D VDp = 10 V Rs R. R1 Cc2 RL R2arrow_forwardElectrical Engineering - elctronic materialarrow_forward
- Discuss High level modulator: circuit diagram and operation - Collector modulatorarrow_forwardAll field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....arrow_forwardMOSFET Amplifier: 1. Determine the drain-to-source voltage (VDs) if VDD = +1sV and RD = 6202. The MOSFET data sheet gives and Ipss = 12 mA. (Ans: Vps=10.6 V) %3Darrow_forward
- Explain the stepsarrow_forwardEXERCISE PROBLEM Ex 4.15: The transconductance gm of the transistor in the circuit of Figure 4.48 is to be changed by changing the bias current such that the small-signal voltage gain is A, = 120. Assume all other parameters are as given in Example 4.15. (a) What are the required values of gm and IBias? (b) Using the results of part (a), what is the output resistance? (Ans. (a) ID = 0.14 mA, gm = 0.335 mA/V; (b) R, = 357 k2) %3Darrow_forwardIdentify the source, drain, gate, and bulk terminals for the transistors in the two circuits in. Assume VDD = 10 V.arrow_forward
- a) The transistor amplifier shown in Figure Q4.a needs to operate at the output quiescent voltage of 10V. The DC current gain of the transistor is hFE =100, the collector resistor Rc =2.2 KQQ, and the power supply voltage is Vcc =20V. i. Determine the quiescent collector current and the value of the base resistor RB needed to bias the transistor so it can operate at this quiescent output voltage. ii. What is the main disadvantage of this type of transistor bias?arrow_forwardVDD VDD Cc2 o ve RG Figure P4.43 Figure P4.44 4.44 The transistor in the circuit in Figure P4.44 has parameters VTN = 0.4 V, K, = 0.5 mA/V², and 2 = 0. The circuit parameters are Vpp = 3 V and R; = 300 k2. (a) Design the circuit such that Ipo = 0.25 mA and VpsQ = 1.5 V. (b) Determine the small-signal voltage gain and the output resistance R,. ww ww ww wwarrow_forwardExplain the steps pleasearrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
- Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSONDelmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage LearningProgrammable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
- Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill EducationElectric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSONEngineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,
How a MOSFET Works - with animation! | Intermediate Electronics; Author: CircuitBread;https://www.youtube.com/watch?v=Bfvyj88Hs_o;License: Standard Youtube License