MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Chapter 4, Problem 4.7P
To determine
The value of the
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Chapter 4 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 4 - Prob. 4.1EPCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - Prob. 4.1TYUCh. 4 - For the circuit shown in Figure 4.1, VDD=3.3V and...Ch. 4 - For the circuit in Figure 4.1, the circuit and...Ch. 4 - The parameters for the circuit in Figure 4.8 are...Ch. 4 - A transistor has the same parameters as those...Ch. 4 - The parameters of the circuit shown in Figure 4.14...Ch. 4 - Consider the circuit shown in Figure 4.14. Assume...Ch. 4 - For the circuit shown in Figure 4.19, the...
Ch. 4 - The commonsource amplifier in Figure 4.23 has...Ch. 4 - Consider the commonsource amplifier in Figure 4.24...Ch. 4 - The parameters of the transistor shown in Figure...Ch. 4 - The sourcefollower circuit in Figure 4.26 has...Ch. 4 - The circuit and transistor parameters for the...Ch. 4 - Consider the circuit shown in Figure 4.28 with...Ch. 4 - Prob. 4.8TYUCh. 4 - The transistor in the sourcefollower circuit shown...Ch. 4 - Consider the circuit shown in Figure 4.35 with...Ch. 4 - For the circuit shown in Figure 4.32, the circuit...Ch. 4 - The bias voltage for the enhancementload amplifier...Ch. 4 - Assume the depletionload amplifier in Figure...Ch. 4 - For the circuit shown in Figure 4.45(a), assume...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - The transconductance gm of the transistor in the...Ch. 4 - For the enhancement load amplifier shown in Figure...Ch. 4 - For the cascade circuit shown in Figure 4.49, the...Ch. 4 - The transistor parameters of the NMOS cascode...Ch. 4 - The transistor parameters of the circuit in Figure...Ch. 4 - Reconsider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.13TYUCh. 4 - For the circuit shown in Figure 4.59, the...Ch. 4 - Discuss, using the concept of a load line, how a...Ch. 4 - How does the transistor widthtolength ratio affect...Ch. 4 - Discuss the physical meaning of the smallsignal...Ch. 4 - Prob. 4RQCh. 4 - Prob. 5RQCh. 4 - Discuss the general conditions under which a...Ch. 4 - Why, in general, is the magnitude of the voltage...Ch. 4 - What are the changes in dc and ac characteristics...Ch. 4 - Sketch a simple sourcefollower amplifier circuit...Ch. 4 - Sketch a simple commongate amplifier circuit and...Ch. 4 - Prob. 11RQCh. 4 - Prob. 12RQCh. 4 - State the advantage of using transistors in place...Ch. 4 - Prob. 14RQCh. 4 - An NMOS transistor has parameters VTN=0.4V ,...Ch. 4 - A PMOS transistor has parameters VTP=0.6V ,...Ch. 4 - An NMOS transistor is biased in the saturation...Ch. 4 - The minimum value of smallsignal resistance of a...Ch. 4 - An nchannel MOSFET is biased in the saturation...Ch. 4 - The value of for a MOSFET is 0.02V1 . (a) What is...Ch. 4 - Prob. 4.7PCh. 4 - The parameters of the circuit in Figure 4.1 are...Ch. 4 - The circuit shown in Figure 4.1 has parameters...Ch. 4 - For the circuit shown in Figure 4.1, the...Ch. 4 - In our analyses, we assumed the smallsignal...Ch. 4 - Using the results of Problem 4.11, find the peak...Ch. 4 - Consider the circuit in Figure 4.14 in the text....Ch. 4 - A commonsource amplifier, such as shown in Figure...Ch. 4 - For the NMOS commonsource amplifier in Figure...Ch. 4 - The parameters of the circuit shown in Figure...Ch. 4 - Repeat Problem 4.15 if the source resistor is...Ch. 4 - The ac equivalent circuit of a commonsource...Ch. 4 - Consider the ac equivalent circuit shown in Figure...Ch. 4 - The transistor in the commonsource amplifier in...Ch. 4 - The parameters of the MOSFET in the circuit shown...Ch. 4 - For the commonsource amplifier in Figure P4.22,...Ch. 4 - The transistor in the commonsource circuit in...Ch. 4 - Prob. 4.24PCh. 4 - For the commonsource circuit in Figure P4.24, the...Ch. 4 - Design the common-source circuit in Figure P4.26...Ch. 4 - For the commonsource amplifier shown in Figure...Ch. 4 - For the circuit shown in Figure P4.28, the...Ch. 4 - Design a commonsource amplifier, such as that in...Ch. 4 - The smallsignal parameters of an enhancementmode...Ch. 4 - The opencircuit (RL=) voltage gain of the ac...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - The source follower amplifier in Figure P4.33 is...Ch. 4 - Consider the circuit in Figure P4.34. The...Ch. 4 - The quiescent power dissipation in the circuit in...Ch. 4 - The parameters of the circuit in Figure P4.36 are...Ch. 4 - Consider the source follower circuit in Figure...Ch. 4 - For the sourcefollower circuit shown in Figure...Ch. 4 - In the sourcefollower circuit in Figure P4.39 with...Ch. 4 - For the circuit in Figure P4.39, RS=1k and the...Ch. 4 - Prob. D4.41PCh. 4 - The current source in the sourcefollower circuit...Ch. 4 - Consider the sourcefollower circuit shown in...Ch. 4 - Prob. 4.44PCh. 4 - Figure P4.45 is the ac equivalent circuit of a...Ch. 4 - The transistor in the commongate circuit in Figure...Ch. 4 - The smallsignal parameters of the NMOS transistor...Ch. 4 - For the commongate circuit in Figure P4.48, the...Ch. 4 - Consider the PMOS commongate circuit in Figure...Ch. 4 - The transistor parameters of the NMOS device in...Ch. 4 - The parameters of the circuit shown in Figure 4.32...Ch. 4 - For the commongate amplifier in Figure 4.35 in the...Ch. 4 - Consider the NMOS amplifier with saturated load in...Ch. 4 - For the NMOS amplifier with depletion load in...Ch. 4 - Consider a saturated load device in which the gate...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - A sourcefollower circuit with a saturated load is...Ch. 4 - For the sourcefollower circuit with a saturated...Ch. 4 - The transistor parameters for the commonsource...Ch. 4 - Consider the circuit in Figure P4.60. The...Ch. 4 - The ac equivalent circuit of a CMOS commonsource...Ch. 4 - Consider the ac equivalent circuit of a CMOS...Ch. 4 - The parameters of the transistors in the circuit...Ch. 4 - Consider the sourcefollower circuit in Figure...Ch. 4 - Figure P4.65 shows a commongate amplifier. The...Ch. 4 - The ac equivalent circuit of a CMOS commongate...Ch. 4 - The circuit in Figure P4.67 is a simplified ac...Ch. 4 - Prob. 4.68PCh. 4 - The transistor parameters in the circuit in Figure...Ch. 4 - Consider the circuit shown in Figure P4.70. The...Ch. 4 - For the circuit in Figure P4.71, the transistor...Ch. 4 - For the cascode circuit in Figure 4.51 in the...Ch. 4 - The supply voltages to the cascode circuit in...Ch. 4 - Consider the JFET amplifier in Figure 4.53 with...Ch. 4 - For the JFET amplifier in Figure P4.75, the...Ch. 4 - The parameters of the transistor in the JFET...Ch. 4 - Consider the sourcefollower WET amplifier in...Ch. 4 - For the pchannel JFET sourcefollower circuit in...Ch. 4 - The pchannel JFET commonsource amplifier in Figure...Ch. 4 - Prob. 4.82CSPCh. 4 - A discrete commonsource circuit with the...Ch. 4 - Consider the commongate amplifier shown in Figure...Ch. 4 - A sourcefollower amplifier with the configuration...
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- A long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5×1010 cm³3, Na =1016 cm³, Nd =2×1015 cm³, Dp= 10 cm?/s, Dn=25 cm²/s, Tmo = 5×10-7 s, Tp0=10-7 s, ɛr=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=1021 cm³ s1 exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.579 mA 0.975 mA 0.759 mA 0.597 mAarrow_forwardThe Vos of P-channel JFET is increas ed from 1 V to 3V. O Does the depletion region narow or widen? O Does the resistance of the channel increase or decrease?arrow_forwardFor the circuit below Junction voltage is 0.7V the +ve and -ve peak of the output waveform is +10V Vin 0 -10 V t 41₁ O +4.3,-4.3 O +5.7, -5.7 O +10.7, -10.7 O +7.3, -7.3 R₁ ww 1.0 ΚΩ D₁ 5 V Diodes are IN914. D₂ 5 V * outarrow_forward
- Calculate K'n for a transistor with μn = 500 cm2/v · s and Tox = 25 nm. Repeat for Tox = 5 nmarrow_forwardA long silicon pn junction photodiode has the following parameters at T =300 K: ni=1.5×1010 cm³3, Na =1016 cm³, Nd =2×10!5 cm³, Dp= 10 cm²/s, Dn=25 cm²/s, TH0 = 5x10-7 s, Tp0=10-7 s, ɛr=11.7. The cross-sectional area of the diode is A=103 cm?. Assume that a reverse-biased voltage of 5 volts is applied and that a uniform generation rate for electron-hole pairs of GL=1021 cm³ sl exists throughout the entire photodiode. The total steady-state photocurrent is equal to... 0.759 mA O 0.975 mA O 0.597 mA O 0.579 mA Oarrow_forwardThe VGS of a p -channel JFET is increased from 1 V to 3 V. (a) Does the depletion region narrow or widen? (b) Does the resistance of the channel increase or decrease?arrow_forward
- S A JFET has a specified Pinch - off Voltage o 5 V. when Vas =0, what is Vos at the Point where the drain current become Constant?arrow_forwardRG C₁ Vino H VDD=1.8 V RD mA M₁ Determine the operating drain current. Answer: ID= C₂ Given: VDD = 1.8 V, RG = 50 kOhm, RD = 2 kOhm, W/L = 20 um/um, VTO = 0.50 V, KP = 250 uA/V², LAMBDA = 0.20 V-1, GAMMA = 0, PHI = 0.70 Find: Voutarrow_forwardVs is a 20 V peak-to-peak, 250Hz (that is 4 mS time period) triangular wave in the circuit below. Select the correct output voltage wave signal info(VO). (Use ideal diode model). Vs ww 1 ΚΩ O The Output voltage clips at +10V O The output voltage clips at -10V O None of the above ID 10 V- + Vo O The output voltage signal is same as input signal when input goes above +10Varrow_forward
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