Chapter 4, Problem 4.50P

The transistor parameters of the NMOS device in the common−gate amplifier in Figure P4.50 are $V_{TN}=0.4\text{V}$ , ${k^{\prime }}_n=100\mu {\text{A/V}}^{\text{2}}$ and $\lambda =0$ . (a) Find $R_D$ such that $V_{DSQ}=V_{DS}\left(\text{sat}\right)+0.25\text{V}$ . (b) Determine the transistor W/L ratio such that the small−signal voltage gain is $A_{\upsilon }=6$ . (c) What is the value of $V_{GSQ}$ ?

Figure P4.50