In Fig. 17-26, three long tubes ( A , B , and C ) are filled with different gases under different pressures. The ratio of the bulk modulus to the density is indicated for each gas in terms of a basic value B 0 / ρ 0 . Each tube has a piston at its left end that can send a sound pulse through the tube (as in Fig. 16-2). The three pulses are sent simultaneously. Rank the tubes according to the time of arrival of the pulses at the open right ends of the tubes, earliest first. Figure 17-26 Question 3.
In Fig. 17-26, three long tubes ( A , B , and C ) are filled with different gases under different pressures. The ratio of the bulk modulus to the density is indicated for each gas in terms of a basic value B 0 / ρ 0 . Each tube has a piston at its left end that can send a sound pulse through the tube (as in Fig. 16-2). The three pulses are sent simultaneously. Rank the tubes according to the time of arrival of the pulses at the open right ends of the tubes, earliest first. Figure 17-26 Question 3.
In Fig. 17-26, three long tubes (A,B, and C) are filled with different gases under different pressures. The ratio of the bulk modulus to the density is indicated for each gas in terms of a basic value B0/ρ0. Each tube has a piston at its left end that can send a sound pulse through the tube (as in Fig. 16-2). The three pulses are sent simultaneously. Rank the tubes according to the time of arrival of the pulses at the open right ends of the tubes, earliest first.
You want to fabricate a soft microfluidic chip like the one below. How would you go about
fabricating this chip knowing that you are targeting a channel with a square cross-sectional
profile of 200 μm by 200 μm. What materials and steps would you use and why? Disregard the
process to form the inlet and outlet.
Square Cross Section
1. What are the key steps involved in the fabrication of a semiconductor device.
2. You are hired by a chip manufacturing company, and you are asked to prepare a silicon wafer
with the pattern below. Describe the process you would use.
High Aspect
Ratio
Trenches
Undoped Si Wafer
P-doped Si
3. You would like to deposit material within a high aspect ratio trench. What approach would you
use and why?
4. A person is setting up a small clean room space to carry out an outreach activity to educate high
school students about patterning using photolithography. They obtained a positive photoresist, a
used spin coater, a high energy light lamp for exposure and ordered a plastic transparency mask
with a pattern on it to reduce cost. Upon trying this set up multiple times they find that the full
resist gets developed, and they are unable to transfer the pattern onto the resist. Help them
troubleshoot and find out why pattern of transfer has not been successful.
5. You are given a composite…
Two complex values are z1=8 + 8i, z2=15 + 7 i. z1∗ and z2∗ are the complex conjugate values.
Any complex value can be expessed in the form of a+bi=reiθ. Find r and θ for (z1-z∗2)/z1+z2∗. Find r and θ for (z1−z2∗)z1z2∗ Please show all steps
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