A furnace tor processing semiconductor materials isformed by a silicon carbide chamber that is zone-heatedon the top section and cooled on the lower section. Withthe elevator in the lowest position, a robot arm inserts thesilicon water on the mounting pins. In a production operation, the wafer is rapidly moved toward the hot zone toachieve the temperature-time history required tor theprocess recipe. In this position, the top and bottom surfaces of the wafer exchange radiation with the hot andcool zones, respectively, of the chamber. The zonetemperatures are T h = 1500 K and T c = 330 K , and theemissivity and thickness of the wafer are ∈ = 0.65 and d = 0.78 mm . respectively. With the ambient gas at T ∞ = 700 K , convection coefficients at the upper andlower surfaces of the wafer are 8 and 4 W/m 2 ⋅ K , respectively. The silicon wafer has a density of 2700 kg/m 3 anda specific heat of 875 J/kg ⋅ K . (a) For an initial condition corresponding to a watertemperature of T w , i = 300 K and the position of thewater shown schematically, determine the corresponding lime rate of change of the wafer temperature. ( d T w / d t ) i . (b) Determine the steady-slate temperature reachedby the wafer if it remains in this position. Howsignificant is convection heat transfer for thissituation? Sketch how you would expect thewafer temperature to vary as a function of vertical distance.
A furnace tor processing semiconductor materials isformed by a silicon carbide chamber that is zone-heatedon the top section and cooled on the lower section. Withthe elevator in the lowest position, a robot arm inserts thesilicon water on the mounting pins. In a production operation, the wafer is rapidly moved toward the hot zone toachieve the temperature-time history required tor theprocess recipe. In this position, the top and bottom surfaces of the wafer exchange radiation with the hot andcool zones, respectively, of the chamber. The zonetemperatures are T h = 1500 K and T c = 330 K , and theemissivity and thickness of the wafer are ∈ = 0.65 and d = 0.78 mm . respectively. With the ambient gas at T ∞ = 700 K , convection coefficients at the upper andlower surfaces of the wafer are 8 and 4 W/m 2 ⋅ K , respectively. The silicon wafer has a density of 2700 kg/m 3 anda specific heat of 875 J/kg ⋅ K . (a) For an initial condition corresponding to a watertemperature of T w , i = 300 K and the position of thewater shown schematically, determine the corresponding lime rate of change of the wafer temperature. ( d T w / d t ) i . (b) Determine the steady-slate temperature reachedby the wafer if it remains in this position. Howsignificant is convection heat transfer for thissituation? Sketch how you would expect thewafer temperature to vary as a function of vertical distance.
Solution Summary: The author explains the time rate change of wafer temperature, Emissivity, Thickness, and Temperature of ambient gas.
A furnace tor processing semiconductor materials isformed by a silicon carbide chamber that is zone-heatedon the top section and cooled on the lower section. Withthe elevator in the lowest position, a robot arm inserts thesilicon water on the mounting pins. In a production operation, the wafer is rapidly moved toward the hot zone toachieve the temperature-time history required tor theprocess recipe. In this position, the top and bottom surfaces of the wafer exchange radiation with the hot andcool zones, respectively, of the chamber. The zonetemperatures are
T
h
=
1500
K
and
T
c
=
330
K
, and theemissivity and thickness of the wafer are
∈
=
0.65
and
d
=
0.78
mm
. respectively. With the ambient gas at
T
∞
=
700
K
, convection coefficients at the upper andlower surfaces of the wafer are 8 and
4
W/m
2
⋅
K
, respectively. The silicon wafer has a density of
2700
kg/m
3
anda specific heat of
875
J/kg
⋅
K
. (a) For an initial condition corresponding to a watertemperature of
T
w
,
i
=
300
K
and the position of thewater shown schematically, determine the corresponding lime rate of change of the wafer temperature.
(
d
T
w
/
d
t
)
i
. (b) Determine the steady-slate temperature reachedby the wafer if it remains in this position. Howsignificant is convection heat transfer for thissituation? Sketch how you would expect thewafer temperature to vary as a function of vertical distance.
The net force exerted on the piston by the exploding fuel-air mixture
and friction is 5 kN to the left. A clockwise couple M = 200 N-m acts on the crank AB.
The moment of inertia of the crank about A is 0.0003 kg-m2
. The mass of the
connecting rod BC is 0.36 kg, and its center of mass is 40 mm from B on the line from B
to C. The connecting rod’s moment of inertia about its center of mass is 0.0004 kg-m2
.
The mass of the piston is 4.6 kg. The crank AB has a counterclockwise angular velocity
of 2000 rpm at the instant shown. Neglect the gravitational forces on the crank,
connecting rod, and piston – they still have mass, just don’t include weight on the FBDs.
What is the piston’s acceleration?
Solve only no 1 calculations,the one with diagram,I need handwritten expert solutions
Problem 3
•
Compute the coefficient matrix and the right-hand side of the n-parameter Ritz approximation of the
equation
d
du
(1+x)·
= 0 for 0 < x < 1
dx
dx
u (0)
=
0, u(1) = 1
Use algebraic polynomials for the approximation functions. Specialize your result for n = 2 and compute the
Ritz coefficients.
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Principles of Heat Transfer (Activate Learning wi...Mechanical EngineeringISBN:9781305387102Author:Kreith, Frank; Manglik, Raj M.Publisher:Cengage Learning