MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Textbook Question
Chapter 1, Problem 1.52P
Determine the small−signal diffusion resistancefor a diode biased at (a) 
(b) 
and (c) 
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Prelab Information
1. Laboratory Preliminary Discussion
First-order Low-pass RC Filter Analysis
The first-order low-pass RC filter shown in figure 1 below represents all voltages and currents in the time domain. It is of course
possible to solve for all circuit voltages using time domain differential equation techniques, but it is more efficient to convert the
circuit to its s-domain equivalent as shown in figure 2 and apply Laplace transform techniques.
vs(t)
i₁(t)
+
R₁
ww
V₁(t)
12(t)
Lic(t)
Vout(t)
=
V2(t)
R₂
Vc(t)
C
Vc(t)
VR2(t)
= V2(t)
+
Vs(s)
Figure 1: A first-order low-pass RC filter represented in the time domain.
I₁(s)
R1
W
+
V₁(s)
V₂(s)
12(s)
Ic(s)
+
Vout(S)
==
Vc(s)
Vc(s)
Zc(s)
=
=
VR2(S)
V2(s)
Figure 2: A first-order low-pass RC filter represented in the s-domain.
use matlab
I need help with this problem and an explanation of the solution for the image described below. (Introduction to Signals and Systems)
Chapter 1 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
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