MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

4th Edition

ISBN: 9781266368622

Author: NEAMEN

Publisher: MCG

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A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

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Textbook Question

Chapter 1, Problem 1.2P

(a) The intrinsic carrier concentration in silicon is to be no larger than n i = 10 12 cm − 3 . Determine the maximum allowable temperature. (b) Repeat part (a) for n i = 10 9 cm − 3 .

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Chapter 1, Problem 1.1P

Chapter 1, Problem 1.3P

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Example Solve the octic polynomial 2x⁸-9x⁷+20x⁶-33x⁵+46x⁴-66x³+80x²-72x+32=0 Solution Divide by x⁴ 2x⁴-9x³+20x²-33x+46-66/x + 80/x² - 72/x³ + 32/x⁴=0 Combine and bring terms 2(x⁴+16/x⁴) - 9(x³+8/x³) +20(x²+4/x²)-33(x+2/x) + 46= 0 Let use substitution Let x+2/x =u (x+2/x)²= u² x²+2x*2/x + 4/x² = u² x²+4/x²= u²-4 (x+2/x)³= x³+8/x³+3x*2/x(x+2/x) u³= x³+8/x²+6u x³+8/x³= u³-6u (x²+4/x²)²= x⁴+2x²*4/x² + 16/x⁴ (u²-4)²= x⁴+16/x⁴ + 8 x⁴+16/x⁴ = (u²-4)²-8 x⁴+16/x⁴ = u⁴-8u²+8 2(u⁴-8u²+8)-9(u³-6u)+20(u²-4)-33u+46=0 Expand and simplify 2u⁴-9u³+4u²+21u-18=0 After checking (u-1)(u-2) Are factors Then 2u²-3u-9=0 u=3, u=-3/2 Assignment question Solve the octic polynomial 2s⁸+s⁷+2s⁶-31s⁴-16s³-32s²-160=0 using the above example question, please explain in detail

b) Another waveform g(t) is defined by =0 t≥0, α>0 otherwise g(t)= At exp(-at) and is plotted in Figure 1 (for representative values of 4 = 1 and α = 1). g(t) 0.4T 0.3+ 0.2 0.1+ 2 0 2 Figure 1 8 c) Show that its amplitude spectrum is |G(@)| = - A (a²+0²)² Describe briefly, with the aid of labelled sketches, how changing a affects the waveform in both the time and frequency domains. d) Deduce the Fourier transform H(@) of h(t) = g(t)+g(t+b)+g(t-b) and calculate its DC amplitude H(0).

Chapter 1 Solutions

MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...

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(a) The intrinsic carrier concentration in silicon is to be no larger than n i = 10 12 cm − 3 . Determine the maximum allowable temperature. (b) Repeat part (a) for n i = 10 9 cm − 3 .

Solution Summary: The author calculates the maximum allowable temperature for the given semiconductor by substituting the known values in equation 1.

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Chapter 1 Solutions