MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Textbook Question
Chapter 1, Problem 3RQ
Describe an extrinsic semiconductor material. What is the electron concentration in terms of the donor impurity concentration? What is the hole concentration in terms of the acceptor impurity concentration?
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Find Laplace transform and the corresponding ROC for
x(t) = e−3sin(2t) u(t)dt
Three similar coils, connected in star, take a total
power of 1.5 kW, at a power factor of 0.2, from a
three-phase, 400 V, 50 Hz supply. Calculate: (a) the
resistance and inductance of each coil; (b) the line
currents if one of the coils is short-circuited.
(a) Three 20 µF capacitors are star-connected across
a 400 V, 50 Hz, three-phase, three-wire supply.
Calculate the current in each line. (b) If one of the
capacitors is short-circuited, calculate the line cur
rents. (c) If one of the capacitors is open-circuited,
calculate: the line currents and the p.d. across each
of the other two capacitors.
ANS:
1.525 A; 2.64 A, 2.64 A, 4.57 A; 1.32 A, 1.32 A, 0;
210 V
Chapter 1 Solutions
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...
Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
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- Explain the advantages of three-phase supply for distribution purposes. (b) Assuming the relationship between the line and phase values of currents and voltages, show that the active power input to a three-phase balanced load is √3VI cos φ, where V and I are line quantities. (c) Three similar inductors, each of resistance 10 Ω and inductance 0.019 H, are delta-connected to a three-phase, 400 V, 50 Hz sinusoidal supply. Calcu late: the value of the line current; the power factor and the active power input to the circuit. ANS: 59.5 A, 0.858 lag, 35.5 kWarrow_forwardnot use ai pleasearrow_forwardA three-phase, 400 V, star-connected motor has an output of 50 kW, with an efficiency of 90 per cent and a power factor of 0.85. Calculate the line current. Sketch a phasor diagram showing the voltages and currents. If the motor windings were connected in mesh, what would be the correct voltage of a three phase supply suitable for the motor? ANS: 90.8 A, 240 Varrow_forward
- Don't use ai to answer I will report you answerarrow_forwardShow with the aid of a phasor diagram that for both star- and delta-connected balanced loads, the total active power is given by √3VI cos φ, where V and I are the line values of voltage and current respectively and φ is the angle between phase values of voltage and current. A balanced three-phase load consists of three coils, each of resistance 4 Ω and inductance 0.02 H. Determine the total active power when the coils are (a) star-connected, (b) delta-connected to a 400 V, three phase, 50 Hz supply. ANS:11.56 kW, 34.7 kWarrow_forwardThe load connected to a three-phase supply comprises three similar coils connected in star. The line currents are 25 A and the apparent and active power inputs are 20 kVA and 11 kW respectively. Find the line and phase voltages, reactive power input and the resistance and reactance of each coil. If the coils are now con nected in delta to the same three-phase supply, calculate the line currents and the active power taken. ANS : 462 V, 267 V, 16.7 kvar, 5.87 Ω, 8.92 Ω; 75 A, 33 kWarrow_forward
- A three-phase delta-connected load, each phase of which has an inductive reactance of 40 Ω and a resistance of 25 Ω, is fed from the secondary of a three-phase star-connected transformer which has a phase voltage of 230 V. Draw the circuit diagram of the system and calculate: (a) the current in each phase of the load; (b) the p.d. across each phase of the load; (c) the current in the transformer secondary windings; the total active power taken from the supply and its power factor.arrow_forwardDerive the numerical relationship between the line and phase currents for a balanced three-phase delta connected load. Three coils are connected in delta to a three-phase, three-wire, 400 V, 50 Hz supply and take a line current of 5 A 0.8 power factor lagging. Calculate the resistance and inductance of the coils. If the coils are star-connected to the same supply, calculate the line current and the total power. Calculate the line cur rents if one coil becomes open-circuited when the coils are connected in star. Ans: 110.7 Ω, 0.264 H; 1.67 A, 926 W; 1.445 A, 1.445 A, 0arrow_forwardDerive, for both star- and delta-connected systems, an expression for the total power input for a balanced three-phase load in terms of line voltage, line current and power factor. The star-connected secondary of a transformer supplies a delta-connected motor taking a power of 90 kW at a lagging power factor of 0.9. If the volt age between lines is 600 V, calculate the current in the transformer winding and in the motor winding. Draw circuit and phasor diagrams, properly labelled, showing all voltages and currents in the transformer secondary and the motor. ANS: . 96.2 A, 55.6 Aarrow_forward
- Deduce the relationship between the phase and the line voltages of a three-phase star-connected generator. If the phase voltage of a three-phase star-connected generator is 200 V, what will be the line voltages: (a) when the phases are correctly connected; (b) when the connections to one of the phases are reversed? ans: 346 V; 346 V, 200 V, 200 Varrow_forwardQ2: Given a discrete sequence x(n) = [1,-1,2,4, 1, 3,-1,1] and its spectrum X(k): i. Show that: X(k) =G(k)+WH(k) k=0,1,2,3,4,5,6,7 where G(k) = DFT[g(n)] and H(k) = DFT[h(n)], g(n) and h(n) are even and odd components of x(n) respectively. ii. Compute G(k) and H(k) using the method of computation of DFTS of two real sequences. (15 marks)arrow_forwardQ2: Given a discrete sequence x(n) = [1,-1,2,4, 1, 3,-1,1] and its spectrum X(k): i. Show that: X(k) = G(k)+WH(k) k = 0,1,2,3,4,5,6,7 where G(k) = DFT[g(n)] and H(k) = DFT[h(n)], g(n) and h(n) are even and odd components of x(n) respectively. ii. Compute G(k) and H(k) using the method of computation of DFTS of two real sequences.arrow_forward
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