MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Chapter 1, Problem 1.30P

Plot log 10 I D versus V D over the range 0.1 V D 0.7 V for (a) I S = 10 12 and (b) I S = 10 14 A .

(a)

Expert Solution
Check Mark
To determine

To plot: The graph of log10ID versus VD .

Answer to Problem 1.30P

The graph of log10ID versus VD for the IS=1012 is shown in Figure 1.

Explanation of Solution

Given:

Reverse saturation current IS=1012A

Diode Voltage range, 0.1VD0.7

Concept Used:

  ID=IS(exp( V D V T ))

Calculation:

For IS=1012

For VD=0.1V

  ID=1012(exp( 0.1 0.026 ))=4.68127×1011Alog10(ID)=10.3296

For VD=0.2V

  ID=1012(exp( 0.2 0.026 ))=2.1914×109Alog10(ID)=8.6593

For VD=0.3V

  ID=1012(exp( 0.3 0.026 ))=1.02591×107Alog10(ID)=6.9889

For VD=0.4V

  ID=1012(exp( 0.4 0.026 ))=4.8023×106Alog10(ID)=5.3185

For VD=0.5V

  ID=1012(exp( 0.5 0.026 ))=2.248×104Alog10(ID)=3.6482

For VD=0.6V

  ID=1012(exp( 0.6 0.026 ))=1.05240×102Alog10(ID)=1.9778

For VD=0.7V

  ID=1012(exp( 0.7 0.026 ))=4.92656×101Alog10(ID)=0.30745

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 1, Problem 1.30P , additional homework tip  1

Figure 1

(b)

Expert Solution
Check Mark
To determine

To plot: The graph of log10ID versus VD .

Answer to Problem 1.30P

The graph of log10ID Versus VD for the IS=1014 is shown in Figure 2.

Explanation of Solution

Given:

Reverse saturation current IS=1014

Concept Used:

Formulae;

  ID=IS(exp( V D V T ))

Calculation:

For IS=1014

For VD=0.1V

  ID=1014(exp( 0.1 0.026 ))=4.68127×1013Alog10(ID)=12.3296

For VD=0.2V

  ID=1014(exp( 0.2 0.026 ))=2.1914×1011Alog10(ID)=10.6593

For VD=0.3V

  ID=1014(exp( 0.3 0.026 ))=1.02591×109Alog10(ID)=8.9889

For VD=0.4V

  ID=1014(exp( 0.4 0.026 ))=4.8023×108Alog10(ID)=7.3185

For VD=0.5V

  ID=1014(exp( 0.5 0.026 ))=2.248×106Alog10(ID)=5.6482

For VD=0.6V

  ID=1014(exp( 0.6 0.026 ))=1.05240×104Alog10(ID)=3.9778

For VD=0.7V

  ID=1014(exp( 0.7 0.026 ))=4.92656×103Alog10(ID)=2.30745

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 1, Problem 1.30P , additional homework tip  2

Figure 2

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Chapter 1 Solutions

MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

Ch. 1 - A silicon pn junction at T=300K is doped at...Ch. 1 - (a) A silicon pn junction at T=300K has a...Ch. 1 - (a) Determine Vbi for a silicon pn junction at...Ch. 1 - A silicon pn junction diode at T=300K has a...Ch. 1 - Recall that the forwardbias diode voltage...Ch. 1 - Consider the circuit in Figure 1.28. Let VPS=4V ,...Ch. 1 - (a) Consider the circuit shown in Figure 1.28. Let...Ch. 1 - The resistor parameter in the circuit shown in...Ch. 1 - Consider the diode and circuit in Exercise EX 1.8....Ch. 1 - Consider the circuit in Figure 1.28. Let R=4k and...Ch. 1 - The power supply (input) voltage in the circuit of...Ch. 1 - (a) The circuit and diode parameters for the...Ch. 1 - Determine the diffusion conductance of a pn...Ch. 1 - Determine the smallsignal diffusion resistance of...Ch. 1 - The diffusion resistance of a pn junction diode at...Ch. 1 - A pn junction diode and a Schottky diode both have...Ch. 1 - Consider the circuit shown in Figure 1.45....Ch. 1 - Consider the circuit shown in Figure 1.46. The...Ch. 1 - A Zener diode has an equivalent series resistance...Ch. 1 - The resistor in the circuit shown in Figure 1.45...Ch. 1 - Describe an intrinsic semiconductor material. What...Ch. 1 - Describe the concept of an electron and a hole as...Ch. 1 - Describe an extrinsic semiconductor material. What...Ch. 1 - Describe the concepts of drift current and...Ch. 1 - How is a pn junction formed? What is meant by a...Ch. 1 - How is a junction capacitance created in a...Ch. 1 - Write the ideal diode currentvoltage relationship....Ch. 1 - Describe the iteration method of analysis and when...Ch. 1 - Describe the piecewise linear model of a diode and...Ch. 1 - Define a load line in a simple diode circuit.Ch. 1 - Under what conditions is the smallsignal model of...Ch. 1 - Describe the operation of a simple solar cell...Ch. 1 - How do the i characteristics of a Schottky barrier...Ch. 1 - What characteristic of a Zener diode is used in...Ch. 1 - Describe the characteristics of a photodiode and a...Ch. 1 - (a) Calculate the intrinsic carrier concentration...Ch. 1 - (a) The intrinsic carrier concentration in silicon...Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Find the concentration of electrons and holes...Ch. 1 - Gallium arsenide is doped with acceptor impurity...Ch. 1 - Silicon is doped with 51016 arsenic atoms/cm3 ....Ch. 1 - (a) Calculate the concentration of electrons and...Ch. 1 - A silicon sample is fabricated such that the hole...Ch. 1 - The electron concentration in silicon at T=300K is...Ch. 1 - (a) A silicon semiconductor material is to be...Ch. 1 - (a) The applied electric field in ptype silicon is...Ch. 1 - A drift current density of 120A/cm2 is established...Ch. 1 - An ntype silicon material has a resistivity of...Ch. 1 - (a) The applied conductivity of a silicon material...Ch. 1 - In GaAs, the mobilities are n=8500cm2/Vs and...Ch. 1 - The electron and hole concentrations in a sample...Ch. 1 - The hole concentration in silicon is given by...Ch. 1 - GaAs is doped to Na=1017cm3 . (a) Calculate no and...Ch. 1 - (a) Determine the builtin potential barrier Vbi in...Ch. 1 - Consider a silicon pn junction. The nregion is...Ch. 1 - The donor concentration in the nregion of a...Ch. 1 - Consider a uniformly doped GaAs pn junction with...Ch. 1 - The zerobiased junction capacitance of a silicon...Ch. 1 - The zerobias capacitance of a silicon pn junction...Ch. 1 - The doping concentrations in a silicon pn junction...Ch. 1 - (a) At what reversebias voltage does the...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - (a) The reversesaturation current of a pn junction...Ch. 1 - A silicon pn junction diode has an emission...Ch. 1 - Plot log10ID versus VD over the range 0.1VD0.7V...Ch. 1 - (a) Consider a silicon pn junction diode operating...Ch. 1 - A pn junction diode has IS=2nA . (a) Determine the...Ch. 1 - The reversebias saturation current for a set of...Ch. 1 - A germanium pn junction has a diode current of...Ch. 1 - (a)The reversesaturation current of a gallium...Ch. 1 - The reversesaturation current of a silicon pn...Ch. 1 - A silicon pn junction diode has an applied...Ch. 1 - A pn junction diode is in series with a 1M...Ch. 1 - Consider the diode circuit shown in Figure P1.39....Ch. 1 - The diode in the circuit shown in Figure P1.40 has...Ch. 1 - Prob. 1.41PCh. 1 - (a) The reversesaturation current of each diode in...Ch. 1 - (a) Consider the circuit shown in Figure P1.40....Ch. 1 - Consider the circuit shown in Figure P1.44....Ch. 1 - The cutin voltage of the diode shown in the...Ch. 1 - Find I and VO in each circuit shown in Figure...Ch. 1 - Repeat Problem 1.47 if the reversesaturation...Ch. 1 - (a) In the circuit Shown in Figure P1.49, find the...Ch. 1 - Assume each diode in the circuit shown in Figure...Ch. 1 - (a) Consider a pn junction diode biased at IDQ=1mA...Ch. 1 - Determine the smallsignal diffusion resistancefor...Ch. 1 - The diode in the circuit shown in Figure P1.53 is...Ch. 1 - The forwardbias currents in a pn junction diode...Ch. 1 - A pn junction diode and a Schottky diode have...Ch. 1 - The reversesaturation currents of a Schottky diode...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - (a) The Zener diode in Figure P1.57 is ideal with...Ch. 1 - Consider the Zener diode circuit shown in Figure...Ch. 1 - The Output current of a pn junction diode used as...Ch. 1 - Using the currentvoltage characteristics of the...Ch. 1 - (a) Using the currentvoltage characteristics of...Ch. 1 - Use a computer simulation to generate the ideal...Ch. 1 - Use a computer simulation to find the diode...Ch. 1 - Design a diode circuit to produce the load line...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...Ch. 1 - Design a circuit to produce the characteristics...
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