MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

4th Edition

ISBN: 9781266368622

Author: NEAMEN

Publisher: MCG

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Textbook Question

Chapter 1, Problem 1.43P

(a) Consider the circuit shown in Figure P1.40. The value of R 1 is reduced to R 1 = 10 k Ω and the cut-in voltage of the diode is V γ = 0.7 V . Determine I D and V D . (b) Repeat part (a) if R 1 = 50 k Ω .

Chapter 1, Problem 1.43P, (a) Consider the circuit shown in Figure P1.40. The value of R1 is reduced to R1=10k and the cut-in
Figure P1.40

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Chapter 1, Problem 1.42P

Chapter 1, Problem 1.44P

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Chapter 1 Solutions

MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

Ch. 1 - Calculate the intrinsic carrier concentration in...Ch. 1 - (a) Calculate the majority and minority carrier...Ch. 1 - Consider ntype GaAs at T=300K doped to a...Ch. 1 - Consider silicon at T=300K . Assume the hole...Ch. 1 - Determine the intrinsic carrier concentration in...Ch. 1 - (a) Consider silicon at T=300K . Assume that...Ch. 1 - Using the results of TYU1.2, determine the drift...Ch. 1 - The electron and hole diffusion coefficients in...Ch. 1 - A sample of silicon at T=300K is doped to...Ch. 1 - (a) Calculate Vbi for a GaAs pn junction at T=300K...

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(a) Consider the circuit shown in Figure P1.40. The value of R 1 is reduced to R 1 = 10 k Ω and the cut-in voltage of the diode is V γ = 0.7 V . Determine I D and V D . (b) Repeat part (a) if R 1 = 50 k Ω . Figure P1.40

Solution Summary: The author explains the value of the diode voltage and current, assuming that the direction of current is positive.

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Chapter 1 Solutions