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An n-type doped silicon sample is in equilibrium at an elevated temperature of
T=600K. It has an electron concentration of n = 4.6 x 1016 cm3 and an intrinsic carrier
concentration of n; = 2.3x1016 cm3.
(a) What is the concentration of holes?
(b) What is the concentration of donors, Np assuming that the concentration of acceptors
NA=0 and the donors are fully ionized.
(c) Calculate the position of the Fermi level with respect to the intrinsic level.

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Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.
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