Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na 10¹6 cm 3 and the doping concentration in the p region is No = 6 x 10¹5 cm-3, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n₂ = 1.5 x 10¹⁰ cm-³ Calculate the minority carrier concentration at the edge of the space charge regions. =

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Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na
10¹6 cm 3 and the doping concentration in the p region is No = 6 x 10¹5 cm-3, and assume that a
forward bias of 0.90 V is applied to the pn junction. Note/ n₁ = 1.5 x 10¹0 cm-3
Calculate the minority carrier concentration at the edge of the space charge regions.
=
Transcribed Image Text:Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is Na 10¹6 cm 3 and the doping concentration in the p region is No = 6 x 10¹5 cm-3, and assume that a forward bias of 0.90 V is applied to the pn junction. Note/ n₁ = 1.5 x 10¹0 cm-3 Calculate the minority carrier concentration at the edge of the space charge regions. =
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