For a Silicon P-N junction with the following specifications: The current density for electrons (Jno ) is 20 A/ cm?, and the current density for holes (Jpo) is 5 A/ cm?, applied forward-biased voltage Va = 0.65 V , the hole's diffusion constant (20 cm?ls), the electron's diffusion constant ( 30 cm'ls), the relative permitti vity (80=11.7), Tn and Tp are 2 x 10-6 and 4 x 10-5 respectively, and the intrinsic carriers concentration( n; = 1.5x1010 cm3): Determine the impurities concentration in the P-side, and in the N -side at T = 300k. %3D

For a Silicon P-N junction with the following specifications: The current density for electrons (Jno ) is 20 A/ cm?, and the current density for holes (Jpo) is 5 A/ cm?, applied forward-biased voltage Va = 0.65 V , the hole's diffusion constant (20 cm?ls), the electron's diffusion constant ( 30 cm'ls), the relative permitti vity (80=11.7), Tn and Tp are 2 x 10-6 and 4 x 10-5 respectively, and the intrinsic carriers concentration( n; = 1.5x1010 cm3): Determine the impurities concentration in the P-side, and in the N -side at T = 300k. %3D

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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