The intrinsic carrier density at 300 K is 1.5 x 10¹0 /cm³ in silicon. For n-type silicon doped to 2.25 x 10¹5 atoms/cm. Find the equilibrium electron and hole densities.

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The intrinsic carrier density at 300 K is \(1.5 \times 10^{10} \, \text{cm}^{-3}\) in silicon. For n-type silicon doped to \(2.25 \times 10^{15} \, \text{atoms/cm}^3\), find the equilibrium electron and hole densities.
Transcribed Image Text:The intrinsic carrier density at 300 K is \(1.5 \times 10^{10} \, \text{cm}^{-3}\) in silicon. For n-type silicon doped to \(2.25 \times 10^{15} \, \text{atoms/cm}^3\), find the equilibrium electron and hole densities.
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