Consider a homogeneously doped n-type semiconductor at 300K. The electronconcentration is equal to 1015 cm³ , n= 10"cm³, L= 1000 cm?/V-sec, ,= 500cm/V-sec, Tao-2×10's, Tpo=1×10’s and the applied electric field is zero. Alight beam in x-direction was applied to the sample resulting excess e-h pair of6x10" cm at x-0 (edge of the sample). Assuming steady state, then holeconcentration at x=20um is . .10"cm³. (use kT=0.025eV at 300K)a)b) 3.4c) 5.1d) 10.1e) 15.2

The given semiconductor is a homogenously doped n-type. At equilibrium the concentration of the…

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm³ , n= 10"cm³, µ= 1000 cm/V-sec, ,= 500 cm²/V-sec , Tao-2×10's, light beam in x-direction was applied to the sample resulting excess e-h pair of 6x10" cm at x=0 (edge of the sample). Assuming steady state, then hole concentration at x=20µm is . .x10"cm. (use kT=0.025eV at 300K) Tpo=1×10's and the applied electric field is zero. A a) b) 3.4 c) 5.1 d) 10.1 e) 15.2

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm³ , n= 10"cm³, µ= 1000 cm/V-sec, ,= 500 cm²/V-sec , Tao-2×10's, light beam in x-direction was applied to the sample resulting excess e-h pair of 6x10" cm at x=0 (edge of the sample). Assuming steady state, then hole concentration at x=20µm is . .x10"cm. (use kT=0.025eV at 300K) Tpo=1×10's and the applied electric field is zero. A a) b) 3.4 c) 5.1 d) 10.1 e) 15.2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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