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Are the magnitude of electron and hole drift currents equal in intrinsic Silicon specimen at room temperature? If not, how can we achieve this? What should be the concentration of holes and electrons in the specimen? (Assume n₁ = 1.5 x 10¹0 charges/cm³, Mn = 1350 cm² / V.S, Mp= 480 cm² /V.s)

Are the magnitude of electron and hole drift currents equal in intrinsic Silicon specimen at room temperature? If not, how can we achieve this? What should be the concentration of holes and electrons in the specimen? (Assume n₁ = 1.5 x 10¹0 charges/cm³, Mn = 1350 cm² / V.S, Mp= 480 cm² /V.s)

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Are the magnitude of electron and hole drift currents equal in intrinsic Silicon specimen at room temperature? If not, how can we achieve this? What should be the concentration of holes and electrons in the specimen? (Assume n₁ = 1.5 x 10¹0 charges/cm³, n = 1350 cm² / V.S, Mp= 480 cm² /V.s)
Transcribed Image Text:Are the magnitude of electron and hole drift currents equal in intrinsic Silicon specimen at room temperature? If not, how can we achieve this? What should be the concentration of holes and electrons in the specimen? (Assume n₁ = 1.5 x 10¹0 charges/cm³, n = 1350 cm² / V.S, Mp= 480 cm² /V.s)
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