An N-type sample of silicon has uniform density (N = 1019 cm ³) of arsenic, and a P-type silicon sample has a uniform density (N₁ = 10¹5 cm-³) of boron. For each sample, determine the following: (a) The temperature at which the intrinsic concentration ni exceeds the impurity density by factor of 10. (b) The equilibrium minority-carrier concentrations at 300 K. Assume full ionization of impurities. (c) The Fermi level relative to the E, or E, in each material at 300 K. (d) The electron and hole concentrations and the Fermi level if both types of impurities are present in the same sample.

An N-type sample of silicon has uniform density (N = 1019 cm ³) of arsenic, and a P-type silicon sample has a uniform density (N₁ = 10¹5 cm-³) of boron. For each sample, determine the following: (a) The temperature at which the intrinsic concentration ni exceeds the impurity density by factor of 10. (b) The equilibrium minority-carrier concentrations at 300 K. Assume full ionization of impurities. (c) The Fermi level relative to the E, or E, in each material at 300 K. (d) The electron and hole concentrations and the Fermi level if both types of impurities are present in the same sample.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

See similar textbooks

Similar questions

In an N-type Si sample, the electron concentration is 3.25×10^15 /cm³. The intrinsic carrier concentration is 1.9 x10^10/cm³. The hole concentration is
U:14)
#3
A silicon wafer is oxidized in dry O2 at 1100 oC for 1 hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.6 μm more oxide in wet O2 at 1200 oC?
Consider a silicon pn junction at T = 300 K Assume the doping concentration in then region is 102cm and the doping concentration in the pregion is 1ore and assume that a forward bias of 0.30 V is applied to the pn junction. Nate/ n = 5 ×10 Calculate the minority carrier concentration at the edge of the space charge regions.
The quenching of tryptophan fluorescence by dissolved O2 gas was monitored by measuring emission lifetimes at 348 nm in aqueous solutions. Determine the quenching rate constant for th is process from the followingdata:
I need the answer as soon as possible
#4
For a 40 wt.% Sn60 wt.% Pb alloy at 150\deg C, (a) what phase(s) is (are) present? (b) What is (are) the composition(s) of the phase(s)? (c) What is (are) the relative amount of the phase(s) in terms of mass fraction?
In an N-type Si sample, the electron concentration is 3.25x10^15 /cm³. The intrinsic carrier concentration is 1.9 x10^10/cm³. The hole concentration is