Answered: si pn-junction h Forward bias volta dge… | bartleby

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U:14)

A Si pn-junction has a cross sectional area of 1x10 ca, at 300 K a
forward bias voltage of 4 v results in 1.7x106 cm
excess holes at the
edge position of the depletion region in the n-side of the junction,
assuming a hole lifetime of1 ps, then the hole current at a penetration
depth of 5 pam in the neutral1 n-region will be:
O 8.840e-6 A
O 6.188e-5 A
O 2.917e-6 A
O 1.887e-8 A
O 6.453e-6 A

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