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27. A Si sample is doped with x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate ar mobility for majority and minority carriers. sa Da 50 cm²/sec 10 nsl

27. A Si sample is doped with x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate ar mobility for majority and minority carriers. sa Da 50 cm²/sec 10 nsl

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Q7. A Si sample is doped with 1016 cm-3 donor impurity is exposed by light at x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate mobility for majority and minority carriers. [Dp = 25 cm²/sec, Dn = 50 cm²/sec, T₁ = Tp = 10 ns]
Transcribed Image Text:Q7. A Si sample is doped with 1016 cm-3 donor impurity is exposed by light at x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate mobility for majority and minority carriers. [Dp = 25 cm²/sec, Dn = 50 cm²/sec, T₁ = Tp = 10 ns]
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