27. A Si sample is doped with x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate ar mobility for majority and minority carriers. sa Da 50 cm²/sec 10 nsl
27. A Si sample is doped with x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel 1 cm distance in 0.4 ms time under a field of 2 V/cm. (a) Calculate p(x) and n(x) at x = 2Lp. (b) Calculate diffusion current density at x= 0, Lp, and 2Lp. (c) Calculate ar mobility for majority and minority carriers. sa Da 50 cm²/sec 10 nsl
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![Q7. A Si sample is doped with 1016 cm-3 donor impurity is exposed by light at
x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel
1 cm distance in 0.4 ms time under a field of 2 V/cm.
(a) Calculate p(x) and n(x) at x = 2Lp.
(b) Calculate diffusion current density at x= 0, Lp, and 2Lp.
(c) Calculate mobility for majority and minority carriers.
[Dp = 25 cm²/sec, Dn = 50 cm²/sec, T₁ =
Tp = 10 ns]](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fc7cdeda0-e51d-40f1-9e69-3ed0a65ba448%2F0617a89a-eaf9-44e4-9a07-ddf46e28535c%2Fc1vt6kk_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q7. A Si sample is doped with 1016 cm-3 donor impurity is exposed by light at
x = 0 to generate excess EHP of amount 1014/cm³. Excess carriers travel
1 cm distance in 0.4 ms time under a field of 2 V/cm.
(a) Calculate p(x) and n(x) at x = 2Lp.
(b) Calculate diffusion current density at x= 0, Lp, and 2Lp.
(c) Calculate mobility for majority and minority carriers.
[Dp = 25 cm²/sec, Dn = 50 cm²/sec, T₁ =
Tp = 10 ns]
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