Q A SAMPLE OF INTRINSIC SILICON AT ROOM TEMPERATURE HAS A CARRIER CONCENTRATION OF 15 x 10/m3. A DONOR IMPURITY IS ADDED TO EXTENT OF 1 DO NOR Rae A TOM PER 10 ATOMS OF SILICON. IF THE CONCENTRATION OF SILICON ATOMS IS 5 x10 " ATOMS/m3 DE TERMINE THE RESISTIVITY OF THE MATERIAL (GIVEN Me: 0135 m²/v.s AND : 0:048 m/V.s )
Q A SAMPLE OF INTRINSIC SILICON AT ROOM TEMPERATURE HAS A CARRIER CONCENTRATION OF 15 x 10/m3. A DONOR IMPURITY IS ADDED TO EXTENT OF 1 DO NOR Rae A TOM PER 10 ATOMS OF SILICON. IF THE CONCENTRATION OF SILICON ATOMS IS 5 x10 " ATOMS/m3 DE TERMINE THE RESISTIVITY OF THE MATERIAL (GIVEN Me: 0135 m²/v.s AND : 0:048 m/V.s )
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Transcribed Image Text:Q A SAMPL E OF INTRINSIC SILICON AT ROOM TEMPERATURE
HAS A CARRIER CONCENTRATION OF 1:5 x 10/m3. A DONOR
IMPURITY IS ADDED TO EXTENT OF 1 DO NOR Rae A TOM
PER 10 ATOMS
OF SILICON. IF THE CONCENTRATION OF
SILICON ATO MS 15 5 x10 2" ATOMS/m3, DE TERMINE THE
RESISTI VITY OF THE MATERIAL .( GIVEN He : 0135 m/v.s AND
uh = 0-048 m/V.s)
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