Answered: A junction employs Nd = 5 * 1017 cm-3… | bartleby

Related questions

Question

A junction employs Nd = 5 * 10¹⁷ cm^-3 and Na = 4 * 10¹⁶ cm^{-3 .}

Assume ni = 1.5 * 10¹⁰cm^-3

a) Determine the majority and minority carrier concentrations on both sides.

b) Calculate the built-in potential V_o.

Expert Solution

Trending now

This is a popular solution!

Step by step

Solved in 4 steps with 3 images

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

VIII. A metal with Dm= 4.75 V, and semiconductor (Si) with x =4.05 eV, Na =1016/cm³, T=300K ni=1.5x101%cm³, For a metal semiconductor Schottky junction. a) Calculate D, b) Is this a Schottky or Ohmic contact?
Hand written solutions are strictly prohibited.
3) For a Ge (not Si) p-n junction with Na = 1016cm-3 and Na = 1017cm-3, the peak electric field in the junction at breakdown is 2 × 105 V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.
A silicon abrupt pn junction in thermal equilibrium at T = 300K is doped under the following conditions: p-side: Erp Ev = 0.18cV - n-side: EcEFn = 0.21eV Draw the energy band diagram of the pn junction Determine the impurity doping concentrations in each region Determine the build in voltage Vbi Find the depletion width in each region xp and x under 0 applied bias V₁ = a OV