A sample of N-type silicon is at the room temperature. When an electric fi eld with strength of 1000 Vlcm is applied to the sample. the hole velocity is measured and found to be 2 x 105 cm/sec.
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A sample of N-type silicon is at the room temperature. When an electric fi eld with strength of 1000 Vlcm is applied to the sample. the hole velocity is measured and found to be 2 x 105 cm/sec.
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- Which statement about the intrinsic carrier concentration in a semiconductor material is FALSE? The intrinsic carrier concentration is exponentially dependent on the inverse of the temperature of the semiconductor material. In an intrinsic semiconductor material, the concentration of electrons in the conduction band is equal to the concentration holes in the valence band. The intrinsic carrier concentration of a semiconductor material at a constant temperature depends on the Fermi energy. The intrinsic Fermi energy is positioned near the center of the bandgap for an intrinsic semiconductor.D Determine the bias current IQI, the gate-to-source voltages of the transistors, and the drain-to-source voltage of Mr. Assume circuit parameters of IREFI = 50 μA, V = 5 V, and V = -5 V. Assume transistor parameters of VTN = 0.4 V (for all transistors), Kn1=0.3 mA/V2, Kn2 = 0.2 mA/V² and Kn3 = 0.14 mA/V². V+= 5V IREFI RD=4K M₁ VDSI Vasi ↓101 M2 VDS2 VGS2- M3 - + VGS 3 V=-5VA silicon diode has a current of 2.5 mA at a forward voltage of 0.6 V at room temperature (300 K). At this current, the diode has the ideality factor of ŋ = 1. Calculate the diode reverse saturation current.
- In a normal conductor heat is generated at a rate I 2R. Therefore a current-carrying conductor must dissipate heat effectively or it can melt or overheat the device in which it is used. Consider a long cylindrical copper wire (resistivity 1.72x 10-8 Ω*m) of diameter 0.75 mm. If the wire can dissipate 80 W/m2 along its surface, what is the maximum current this wire can carry?If the gate length of a nMOS transistor is 10nm, under a certain value of electric field and the saturation velocity of electrons in silicon is in the order of 2x105 m/s. For a rough estimation, the possible required time for "an electron" to travel across the Si channel will be in about seconds.A pn junction diode and a Schottky diode have equal cross-sectional areas and have forward-bias currents of 0.5 mA. The reverse-saturation current of the Schottky diode is The difference in forward-bias voltages between the two diodes is 0.30 V. Determine the reverse-saturation current of the pn junction diode.
- The 2DEG in (iii) is patterned to produce a clean, quasi-1D channel. The current I through the channel is = Nev, where N = the number of electrons, e the electronic charge and = the electrons' group velocity. The number of electrons N(ɛ) = f(ɛ, µ)g(ɛ), where f (ɛ, u) =Fermi-Dirac distribution = 1 and g(ɛ) density of states = dn/dɛ. 1+exp() kBT (a). Write down the dispersion relation for free electrons of mass m. What is their group velocity v? (b). Find an expression for g(ɛ) involving the group velocity. Leave your answer in terms of v.Suppose you need to design an n-type silicon semiconductor with a conductivity of 160 (N ·m)-1 at 300K. The atomic weight of silicon is 28.09 g/mol, and the density is 2.33g/cm³. The mobility of electrons/holes in silicon at different doping concentrations under different temperature is shown in the following figure. 0.1 102 102 10, 10 0.01 0.01 A kgou aoThe hole concentration in silicon at 300 K varies linearly from x=0 to x=0.01 cm. The hole diffusion coefficient is Dp= 10 cm2/sec, the hole diffusion current density is Jdif = 20 A/cm2, and the hole concentration at x=0 is 4x1017 cm-3. Determine the hole concentration at x=0.01 cm.
- An SiO2 layer is formed on top of pure silicon. The Auger peak of silicon is at 91 eV. After oxidation, it is shifted to 78 eV. Therefore, pure and oxidized silicon are easily distinguishable. When the surface is oxidized, the silicon 91 eV peak intensity decreases because of attenuation by the silicon dioxide layer. After an SiO2 layer of thickness t is formed, the 91 eV Auger peak drops to 15% of its clean surface value. The angle of electron collection is 45o from the surface normal. If the mean free path is 0.5 nm for 91 eV electrons in silicon dioxide, what is the thickness t of the oxide coating1. a) Use the Fermi-Dirac distribution function with no approximations to determine the probability than an energy level at E = EF + 5kT is occupied by an electron. b) Use the Boltzmann approximation to determine the probability than an energy level at E = EF + 5kT is occupied by an electron. c) The % difference between a value R and a reference value Rf is determined by the following equation; % D (R-Rf) x 100% Rf Calculate the % difference between results obtained in a) and b) above using the result without the approximation as the reference value. d) Is the Boltzmann approximation valid when E - EF = 5kT? 1.0 Fermi-Dirac function Boltzmann approximation EF Figure 3.35 | The Fermi-Dirac probability function and the Maxwell-Boltzmann approximation.The intrinsic carrier concentration of silicon (Si) is expressed as - E n₁=5.2×10¹5T¹.5exp- i electrons at 30°C. n = cm -3 g 2kT cm -3 where Eg = 1.12 eV. Determine the density of Round your answer to 0 decimal places.