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The hole concentration in silicon at 300 K varies linearly from x=0 to x=0.01 cm. The hole diffusion coefficient is D_p= 10 cm²/sec, the hole diffusion current density is J_dif= 20 A/cm², and the hole concentration at x=0 is 4x10¹⁷ cm^-3. Determine the hole concentration at x=0.01 cm.

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