(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m?/v-scorresponding values for pure silicon are 0.13 and 0.05 m²/v-s respectively.intrinsic conductivity for both the materials Assume n=2.5x1016/m for Silicon at room temperature .(1-6) Calculate the donor corcentertion in N-type Germanium having resistivity of 100q=1.6x 101 c and µa =0.36m/v-s.(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm percm given for Germanium n,-2.5x1013/cm H-3800 cm/v-s, Hp=1800 cm/v-s, and for Siliconn=1.5x10/cm, Ha=1300 cm/v-s, Hp=500 cm2/v-s(1-8) Find the diffusion coefficient of holes and electrons for Germanium at 300 k. Themobilities in cm?/v-s at 300 k for electrons and holes are respectively 3600 and 1700. Density of carriers is2.5x 10/m .Boltzmann constant K=1.38 x 10.theFind the values of10/m for Germanium and ni=1.5xQm takecarrier

According to the given question (1-5) , Mobilities for Germanium , un= 0.33 m2/vs= 3300 cm2/Vs up=…

(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s corresponding values for pure silicon are 0.13 and 0.05 m2/v-s respectively. intrinsic conductivity for both the materials Assume n=2.5x 1016/m for Silicon at room temperature. the Find the values of 109/m for Germanium and ni=1.5x

(1-5) The mobilites of free electrons and holes in pure Germanium are 0.33 and 0.18m/v-s corresponding values for pure silicon are 0.13 and 0.05 m2/v-s respectively. intrinsic conductivity for both the materials Assume n=2.5x 1016/m for Silicon at room temperature. the Find the values of 109/m for Germanium and ni=1.5x

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

See similar textbooks

Similar questions

a metal is heated, its atoms vibrate more when about their position in the lattice (a netuons of crossed burs) This Causes them to take up more Space, so the solid metal expands from its original shape. calculate the heat needed to expand a ring made of copper internal diameter of Somm to fit over a Shaft of with an diameter So.05mm. The shaft is measured at a temp 182
If the atomic radius of a metal that has the face-centered cubic crystal structure is 0.2718 nm, calculate the volume of its unit cell in nm³.
Consider a silicon pn junction at T= 300 K. Assume the doping concentration in the n region is 10 cm and the doping concentration in the p region is 10 cm, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, 1.5 x 10 em Calculate the minority carrier concentration at the edge of the space charge regions.
Q1/GaAs is a semiconductor compound has number of electrons (n) of 1023/m³, electron charge (q) of (1.602 x10-¹9) c, electron mobility (He) of (6.2422 x10-¹1) m²/v.s at 25 c°. " Estimate the tempreture in (cº) that GaAs has conductivity of 3.7 x 10˚³ (Q -m)`¹ where Eg of 1.42 ev, K of 8.62 x 105 ev / k
Assume that the conductivity of a pure semiconductor at an applied electric field of 450 mV/m is 2.75 X 1013/Ω-cm. Given that the drift velocity of electrons is 0.135 m/s and that of holes is 0.048 m/s, determine the density of the charge carriers per cubic meter in this material. Round-off up to 4 decimal places for the entire solution till the final answer.
In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150
The input resistance of a silicon transistor is 100 Ω. Base current is changed by 40 µA which results in achange in collector current by 2 mA. This transistor is used as a common emitter amplifier with a loadresistance of 4 KΩ. The voltage gain of the amplifier is-
QIA/ Find the resistivity of intrinsic Silicon if n;=1.516x10"c and u=1300 if donor -type impurity is added to the intrinsic of 1 atom per 10° silicon atoms find resistivity. Assume Np=5x10"electron /cm
The Fermi energy of the conduction electrons in lithium metal is 4,7 eV measured from the bottom of the conduction band, what fraction of these electrons are thermally excited at 300 K? Make a rough estimate of the heat capacity of 1 mole of the electron at 10 K.