A silicon sample is doped with phosphorus impurity concentration of 10 cm*. At 300K, calculate the electron and hole concentrations and position of the Fermi level. Assume that the distribution of states in the conduction band is given by N(E) dE = 8x1020 VEDE cm³ where E is the energy expressed in electron volts. %3D Calculate the number of electrons between the energy interval 1.9kT and 2.1kT above the band edge of the conduction band Ec.

A silicon sample is doped with phosphorus impurity concentration of 10 cm*. At 300K, calculate the electron and hole concentrations and position of the Fermi level. Assume that the distribution of states in the conduction band is given by N(E) dE = 8x1020 VEDE cm³ where E is the energy expressed in electron volts. %3D Calculate the number of electrons between the energy interval 1.9kT and 2.1kT above the band edge of the conduction band Ec.