Materials Science And Engineering Properties
Materials Science And Engineering Properties
1st Edition
ISBN: 9781111988609
Author: Charles Gilmore
Publisher: Cengage Learning
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Chapter 4, Problem 4.18P
To determine

(a)

The validity of the given statement for copper by comparing the vacancy concentration when there is one vacancy in the atom positions surrounding each atom with the equilibrium vacancy.

Expert Solution
Check Mark

Answer to Problem 4.18P

The statement that the FCC metals melt when there is on the average one vacancy in the atom positions surrounding each atom is wrong.

Explanation of Solution

Given:

The vacancy formation enthalpy in copper is 1.0eV per vacancy.

The melting temperature of copper is 1356K.

Formula Used:

The formula to calculate the concentration of vacancies in silicon is given by,

nvN=exp(ΔHvkT)   ........ (I)

Here, nvN is the concentration of vacancies in silicon, k is Boltzmann’s constant, ΔHv is enthalpy of vacancy formation, and T is temperature at which the vacancy sites are formed.

Calculations:

The concentration of vacancies is calculated as,

Substitute 1.0eV/vacancy for ΔHv, 8.62×105eV/atomK for k and 1356K for T in equation (I).

nvN=exp( 1.0 eV/ vacancy ( 8.62× 10 5 eV/ atomK )( 1356K ))=exp(8.555)=1.9×104vacancies/atom

In FCC structure every atom is surrounded by 12 atoms, so if there exists one vacancy out these 12 atoms. Then,

The vacancy concentration for this condition is given by,

V=112=8.33×102

Thus, the vacancy concentration is less at the melting temperature, when compared to the given statement.

Conclusion:

Therefore, the statement that the FCC metals melt when there is on the average one vacancy in the atom positions surrounding each atom is wrong.

To determine

(b)

The entropy of mixing the equilibrium number of vacancies into a copper crystal at the melting temperature.

Expert Solution
Check Mark

Answer to Problem 4.18P

The entropy of mixing the equilibrium number of vacancies into a copper crystal at the melting temperature is 943×1014eV/moleK.

Explanation of Solution

Given:

The total number of crystal sites is equal to 1mole.

Formula Used:

The concentration of copper for mixing is given by,

CCu=1Cv   ........ (II)

Here, CCu is concentration of copper, and Cv is the equilibrium vacancy concentration.

The entropy of mixing equilibrium vacancy concentration into copper at the melting temperature is given by,

ΔSm=NAk(CCulnCCu+CvlnCv)   ........ (III)

Here, ΔSm is entropy of mixing, and NA is the number of vacancy sites in one mole of copper.

Calculations:

The entropy of mixing the equilibrium number of vacancies into a copper crystal at the melting temperature is calculated as,

Substitute 1.9×104 for Cv in equation (II).

CCu=(11.9×104)Cuatoms/totalsites

Substitute 6.02×1023Totalsites/mole for NA, 8.62×105eV/atomK for k, 1.9×104vacancies/Totalsite for Cv, and (11.9×104)Cuatoms/totalsites for CCu in equation (III).

ΔSm=[{ ( 6.02× 10 23 Totalsites mole ) ( 8.62× 10 5 eV/ atomK )}( { ( ( 11.9× 10 4 ) Cuatoms totalsites ) ln( ( 11.9× 10 4 ) Cuatoms totalsites ) }+ { ( 1.9× 10 4 vacancies Totalsite ) ln( 1.9× 10 4 vacancies Totalsite ) } )]=(6.02× 10 23 Totalsites mole)(8.62× 10 5eV/atomK)(1.9× 10 41.628× 10 3)=943×1014eV/moleK

Conclusion:

Therefore, the entropy of mixing the equilibrium number of vacancies into a copper crystal at the melting temperature is 943×1014eV/moleK.

To determine

(c)

The change in the Gibbs free energy.

Expert Solution
Check Mark

Answer to Problem 4.18P

The change in Gibbs free energy is 1.35×1019eV/mole.

Explanation of Solution

Formula Used:

The change in Gibbs free energy when the equilibrium vacancy concentration forms relative to that of copper are given by,

ΔGv=CvNAΔHvTΔSm   ........ (IV)

Here, ΔGv is the change in Gibbs free energy, T is the temperature at which mixing takes place.

Calculations:

The concentration of vacancies is calculated as,

Substitute 6.02×1023totalsitesmole for NA, 1.9×104vacanciestotalsites for CV, 1356K for T, 943×1014eV/moleK for Sm and 1.0eV/vacancy for ΔHV in equation (IV).

ΔGv=[( 1.9× 10 4 vacancies totalsites )( 6.02× 10 23 totalsites mole )( 1.0 eV/ vacancy )( 1356K)( 943× 10 14 eV/ moleK )]=1.144×1020eV/mole1.279×1020eV/mole=1.35×1019eV/mole

Thus, the change in Gibbs free energy when the equilibrium vacancy concentration forms relative to that of copper is 1.35×1019eV/mole. As, the change in Gibbs free energy is negative, the change is spontaneous.

Conclusion:

Therefore, the change in Gibbs free energy is 1.35×1019eV/mole.

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Materials Science And Engineering Properties
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ISBN:9781111988609
Author:Charles Gilmore
Publisher:Cengage Learning