MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)
4th Edition
ISBN: 9781266368622
Author: NEAMEN
Publisher: MCG
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Chapter 16, Problem 16.3EP

(a)

To determine

The output voltage vo

(a)

Expert Solution
Check Mark

Answer to Problem 16.3EP

The output voltage vo is vo=0.0414V

Explanation of Solution

Given:

Power supply voltage, VDD=3V

Intrinsic trans conductance parameter, kn'=100×106A/V2

Device parameter for driver transistor, VTND=0.4V

Device parameter for load transistor, VTNL=0.8V

Aspect ratio of driver transistor, (WL)D=6

Aspect ratio of load transistor, (WL)L=2

When input voltage, vI=3V

Calculation:

Given depletion-load NMOS inverter:

  MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL), Chapter 16, Problem 16.3EP

For the NMOS inverter with Depletion load, the output voltage equation is given by

  KDKL[2(vIVTND)vovo2]=(VTNL2)

The parameters KD and KL

  KD=(kn'2)(WL)DKD=(100×1062)×(6)KD=3×104A/V2KL=(kn'2)(WL)L=(100×1062)×(2)KL=1×104A/V2

Now substituting all the values in the above voltage equation,

  3×1041×104[2(30.4)vovo2]=(0.8)23[2(2.6)vovo2]=0.645.2vovo2=0.6435.2vovo2=0.2133vo25.2vo+0.2133=0

On comparing the above equation with quadratic equation (ax2+bx+c=0) whose roots are

  x=b±b24ac2avo=(5.2)±(5.2)4(1)(0.2133)2(1)=5.2±26.18682vo=5.2±5.11732vo=5.2+5.11732,5.25.11732vo=10.31732,0.08272vo=5.15865,0.04135

The output voltage cannot be greater than VDD=3V so the output voltage is vo=0.0414V

Conclusion:

Therefore, the output voltage vo is vo=0.0414V

(b)

To determine

The maximum current and maximum power dissipation in the inverter.

(b)

Expert Solution
Check Mark

Answer to Problem 16.3EP

The maximum current and maximum power dissipation in the inverter are

  iD,max=0.064mAPD,max=0.192mW

Explanation of Solution

Given:

Power supply voltage, VDD=3V

Intrinsic trans conductance parameter, kn'=100×106A/V2

Device parameter for driver transistor, VTND=0.4V

Device parameter for load transistor, VTNL=0.8V

Aspect ratio of driver transistor, (WL)D=6

Aspect ratio of load transistor, (WL)L=2

Calculation:

Maximum current is

  iD,max=KL(VTNL)2=(1×104)(0.8)2=(1×104)(0.64)iD,max=0.064mA

Maximum Power dissipated in the inverter is

  PD,max=iD,max×VDDPD,max=0.064mA×3VPD,max=0.192mW

Conclusion:

Therefore, maximum current and maximum power dissipation in the inverter are

  iD,max=0.064mAPD,max=0.192mW

(c)

To determine

The transition points for the driver and load transistors.

(c)

Expert Solution
Check Mark

Answer to Problem 16.3EP

The transition points for the driver and load transistors are

  VIt=0.862V,VOt=0.462VVIt=0.862V,VOt=2.2V

Explanation of Solution

Given:

Power supply voltage, VDD=3V

Intrinsic trans conductance parameter, kn'=100×106A/V2

Device parameter for driver transistor, VTND=0.4V

Device parameter for load transistor, VTNL=0.8V

Aspect ratio of driver transistor, (WL)D=6

Aspect ratio of load transistor, (WL)L=2

When input voltage, vI=3V

Calculation:

Transition points for the driver transistor

  (WL)D(vItVTND)2=(WL)L(VTNL)26(vIt0.4)2=2(0.8)26(vIt0.4)2=2(0.8)2(vIt0.4)=(0.8)26vIt0.4=(0.8)(0.577)vIt0.4=0.4616vIt=0.4616+0.4vIt=0.8616vIt=0.862V

Output transition point is

  Vot=VItVTND=0.8620.4Vot=0.462V

Transition points for the load transistor

  (WL)D(vItVTND)2=(WL)L(VTNL)26(vIt0.4)2=2(0.8)26(vIt0.4)2=2(0.8)2(vIt0.4)=(0.8)26vIt0.4=(0.8)(0.577)vIt0.4=0.4616vIt=0.4616+0.4vIt=0.8616vIt=0.862V

Output transistor point is

  Vot=VIt+VTND=3+(0.8)Vot=2.2V

Conclusion:

The transition points for the driver and load transistors are

  VIt=0.862V,VOt=0.462VVIt=0.862V,VOt=2.2V

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Chapter 16 Solutions

MICROELECT. CIRCUIT ANALYSIS&DESIGN (LL)

Ch. 16 - Consider the NMOS logic circuit in Figure 16.18....Ch. 16 - Repeat Exercise TYU 16.5 for the NMOS logic...Ch. 16 - The CMOS inverter in Figure 16.21 is biased at...Ch. 16 - swA CMOS inverter is biased at VDD=3V . The...Ch. 16 - A CMOS inverter is biased at VDD=1.8V . The...Ch. 16 - Prob. 16.7TYUCh. 16 - Repeat Exercise Ex 16.9 for a CMOS inverter biased...Ch. 16 - Determine the transistor sizes of a 3input CMOS...Ch. 16 - Design the widthtolength ratios of the transistors...Ch. 16 - Design a static CMOS logic circuit that implements...Ch. 16 - Prob. 16.10TYUCh. 16 - Prob. 16.11TYUCh. 16 - Sketch a clocked CMOS logic circuit that realizes...Ch. 16 - Prob. 16.12EPCh. 16 - Prob. 16.13TYUCh. 16 - Consider the CMOS transmission gate in Figure...Ch. 16 - Prob. 16.15TYUCh. 16 - Prob. 16.14EPCh. 16 - Prob. 16.16TYUCh. 16 - Prob. 16.17TYUCh. 16 - Sketch the quasistatic voltage transfer...Ch. 16 - Sketch an NMOS threeinput NOR logic gate. Describe...Ch. 16 - Discuss how more sophisticated (compared to the...Ch. 16 - Sketch the quasistatic voltage transfer...Ch. 16 - Discuss the parameters that affect the switching...Ch. 16 - Prob. 6RQCh. 16 - Sketch a CMOS threeinput NAND logic gate. Describe...Ch. 16 - sDiscuss how more sophisticated (compared to the...Ch. 16 - Prob. 9RQCh. 16 - Sketch an NMOS transmission gate and describe its...Ch. 16 - Sketch a CMOS transmission gate and describe its...Ch. 16 - Discuss what is meant by pass transistor logic.Ch. 16 - Prob. 13RQCh. 16 - Prob. 14RQCh. 16 - Prob. 15RQCh. 16 - Describe the basic architecture of a semiconductor...Ch. 16 - ‘Sketch a CMOS SRAM cell and describe its...Ch. 16 - Prob. 18RQCh. 16 - Describe a maskprogrammed MOSFET ROM memory.Ch. 16 - Describe the basic operation of a floating gate...Ch. 16 - Prob. 16.1PCh. 16 - Prob. 16.2PCh. 16 - (a) Redesign the resistive load inverter in Figure...Ch. 16 - Prob. D16.4PCh. 16 - Prob. 16.5PCh. 16 - Prob. D16.6PCh. 16 - Prob. 16.7PCh. 16 - Prob. 16.8PCh. 16 - For the depletion load inverter shown in Figure...Ch. 16 - Prob. 16.10PCh. 16 - Prob. D16.11PCh. 16 - Prob. D16.12PCh. 16 - Prob. 16.13PCh. 16 - For the two inverters in Figure P16.14, assume...Ch. 16 - Prob. 16.15PCh. 16 - Prob. 16.16PCh. 16 - Prob. 16.17PCh. 16 - Prob. 16.18PCh. 16 - Prob. D16.19PCh. 16 - Prob. 16.20PCh. 16 - Prob. 16.21PCh. 16 - Prob. 16.22PCh. 16 - In the NMOS circuit in Figure P16.23, the...Ch. 16 - Prob. 16.24PCh. 16 - Prob. 16.25PCh. 16 - Prob. 16.26PCh. 16 - What is the logic function implemented by the...Ch. 16 - Prob. D16.28PCh. 16 - Prob. D16.29PCh. 16 - Prob. 16.31PCh. 16 - Prob. 16.32PCh. 16 - Prob. 16.33PCh. 16 - Consider the CMOS inverter pair in Figure P16.34....Ch. 16 - Prob. 16.35PCh. 16 - Prob. 16.36PCh. 16 - Prob. 16.37PCh. 16 - Prob. 16.38PCh. 16 - Prob. 16.39PCh. 16 - (a) A CMOS digital logic circuit contains the...Ch. 16 - Prob. 16.41PCh. 16 - Prob. 16.42PCh. 16 - Prob. 16.43PCh. 16 - Prob. 16.44PCh. 16 - Prob. 16.45PCh. 16 - Prob. 16.46PCh. 16 - Prob. 16.47PCh. 16 - Prob. 16.48PCh. 16 - Prob. 16.49PCh. 16 - Prob. 16.50PCh. 16 - Prob. 16.51PCh. 16 - Prob. 16.52PCh. 16 - Prob. D16.53PCh. 16 - Figure P16.54 is a classic CMOS logic gate. (a)...Ch. 16 - Figure P16.55 is a classic CMOS logic gate. (a)...Ch. 16 - Consider the classic CMOS logic circuit in Figure...Ch. 16 - (a) Given inputs A,B,C,A,B and C , design a CMOS...Ch. 16 - (a) Given inputs A, B, C, D, and E, design a CMOS...Ch. 16 - (a) Determine the logic function performed by the...Ch. 16 - Prob. 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