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EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9) Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source

EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9) Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9)
Transcribed Image Text:EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9)
Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source
Transcribed Image Text:Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source
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