Problem 4 In a silicon bar uniformly doped with 1×1015 phosphorus atoms per cm³ and 1×1018 boron atoms per cm³. a) Calculate the mobile electron and hole concentrations for this bar. b) Now, if we apply an electric field in the +x direction with a magnitude of 103V/cm to the silicon bar, what are the electron and hole drift current densities? What will be the diffusion current? What is the total current density in the bar? Remember charge neutrality will exist in this uniformly doped bar. Use μn=1000 cm²/Vs and up=500 cm²/Vs for electron and hole mobilities, respectively. c) If the bar is 100 μm long and has a square cross-section that is 10 μm ×10 μm calculate the resistance of the bar in ohms. (Be careful with units here)
Problem 4 In a silicon bar uniformly doped with 1×1015 phosphorus atoms per cm³ and 1×1018 boron atoms per cm³. a) Calculate the mobile electron and hole concentrations for this bar. b) Now, if we apply an electric field in the +x direction with a magnitude of 103V/cm to the silicon bar, what are the electron and hole drift current densities? What will be the diffusion current? What is the total current density in the bar? Remember charge neutrality will exist in this uniformly doped bar. Use μn=1000 cm²/Vs and up=500 cm²/Vs for electron and hole mobilities, respectively. c) If the bar is 100 μm long and has a square cross-section that is 10 μm ×10 μm calculate the resistance of the bar in ohms. (Be careful with units here)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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