Problem 4 In a silicon bar uniformly doped with 1×1015 phosphorus atoms per cm³ and 1×1018 boron atoms per cm³. a) Calculate the mobile electron and hole concentrations for this bar. b) Now, if we apply an electric field in the +x direction with a magnitude of 103V/cm to the silicon bar, what are the electron and hole drift current densities? What will be the diffusion current? What is the total current density in the bar? Remember charge neutrality will exist in this uniformly doped bar. Use μn=1000 cm²/Vs and up=500 cm²/Vs for electron and hole mobilities, respectively. c) If the bar is 100 μm long and has a square cross-section that is 10 μm ×10 μm calculate the resistance of the bar in ohms. (Be careful with units here)

Problem 4 In a silicon bar uniformly doped with 1×1015 phosphorus atoms per cm³ and 1×1018 boron atoms per cm³. a) Calculate the mobile electron and hole concentrations for this bar. b) Now, if we apply an electric field in the +x direction with a magnitude of 103V/cm to the silicon bar, what are the electron and hole drift current densities? What will be the diffusion current? What is the total current density in the bar? Remember charge neutrality will exist in this uniformly doped bar. Use μn=1000 cm²/Vs and up=500 cm²/Vs for electron and hole mobilities, respectively. c) If the bar is 100 μm long and has a square cross-section that is 10 μm ×10 μm calculate the resistance of the bar in ohms. (Be careful with units here)

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Similar questions

question in photo plz
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
Silicon is doped with boron to a concentration of 4×1010 atom/cm3.assume the intrinsic 1.5×1010 /cm3 and the value of kT/q to be 25 mV at 300 K. Compared to the undoped silicon, The Fermi level of doped silicon (a) Goes down by 0.13 eV (b) Goes up by 0.13 eV (c) Goes down by 0.427 eV (d) Goes up by 0.427 eV
PROBLEM 1 Calculate the drift current density in a semiconductor for a given electric field. Consider a germanium sample at T = 300°K with doping concentration of Nd = 0 and No = 1016 cm-3 . Assume complete ionization and electron and hole mobilities are 3900 cm²/V-sec and 1900 cm2/V-sec. The applied electric field is E = 50 V/cm.
Do only if you know this concept ..I am unable to find it in my textbooks please mention the formula.
Suppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a diode that has a resistivity of 2.5 μ·cm. What is the electric ﬁeld needed to support this drift current density?
An impurity such as antimony (Sb) has five electrons in its outer shell. When there are Sb impurities in Silicon,..... Please select one: a. the Crystal will be negatively charged b. an N-type material is formed c. both of the above d. None of the above
Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm², what is net capacitance at 99 V reverse bias voltage?
Make a sketch of the I–V characteristic curve for a diode with Is = 0.02 pA for VD values from zero to 0.7 V. Use the approximation ID = Is e^(Vd/VT) What is the slope of a line tangent to the curve at ID = 2 mA?
An n-type semiconductor sample has an electron density of 6.25x10^18/cm^3 at 300K.If the additive-free concentration of the carriers is 2.5x10^13/cm^3, what is the hole density at this temperature?