Question 3Which of the following quantities is boosted by this circuit when a BJT isconnected in a circuit in common base configuration?O input resistorO current gainO PowerO output resisterQuestion 4For a BJT with common base connection, the emitter current is 1 mA. If theemitter circuit is open, the collector current is 50 μA. Find the total collectorcurrent, if a = 0.92.The current gain value of common base configuration isO 0.92 mA01.05 mAO 0.87 mA0.97 mA

3. Output resisterWhen a BJT is connected in a common base configuration, the output resistance is…

Answered: Question 3 Which of the following…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

In a BJT, is always the largest and is always lightly doped. a. emitter and collector b. collector and emitter C. collector and base d. emitter and base
Draw, Illustrate and label your schematic diagram before solving the problem. 3) Given an Emitter-Stabilize Biased transistor circuit with beta DC is 250,Base resistor is 150 ohms, collector resistor is 1.5k ohms ,emitter resistor is 500 ohms ,emitter voltage supply is -5v and Voltage at common collector is +28V,Voltage at Base-emitter junction is 0.7v,. Determine Base current, Collector current and Voltage at collector-emitter junction.
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Determine in which mode (depletion, enhancement or neither) each D-MOSFET in the figure below.
A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
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Question 4 |Soalan 41 (a) Explain THREE (3) type of operating regions for BJT and draw the biasing configurations circuit of each type. [Terangkan TIGA (3) kawasan operasi untak BJT dan lukiskan konfigurasi litar pincangan bagi setiap jenis.) If the emitter current, I of a transistor is 10 mA and Ig is 1/150 of lc, calculate the value of le and Ig- (b) [Jika anus pemancar, Ig untuk sebwah transistor ialah l10 mA dan Is ialah 1/150 lG kirakan nilai Ie dan Is (c) Figure 6 shows a fixed biasing cirecuit configuration for BJT. [Rajah 6 menunjukkan sebuah litar pincangan tetap untuk BJT.J Re 650 2 Ra 10 V Vee 6.5 ka 20 V 6 V Figure 6 [Rajah 61 ....11/20 SULIT -11- (i) [Kirakan arus tapak, I Calculate base current, In. (ii) Calculate collector current, le. [Kirakan arus pemungut, Ic.) (iii) Calculate emitter current, Ip. [Kirakan arus pemancar, I (iv) Calculate the value of Boc- [Kirakan nilai Bpe/
In a common base configuration, collector current is 1.95 milliamperes and base current is 0.05 milliamperes. Find the value of alpha dc (adc)? Answer:
Transistors originally were made with germanium but modern transistors use silicon for its higher heat tolerance. Transistors amplify and switch signals. They can be analog or digital. Two prevalent transistors today are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) and Bipolar Junction Transistors (BJT).In your own understanding in the field of electronics can you compare and contrast which one has merit over the other ?
Problem-5 The LED in Figure below requires 30 mA to emit a sufficient level of light. Therefore, the collector current should be approximately 30 mA. For the following circuit values, determine the amplitude of the square wave input voltage necessary to make sure that the transistor saturates. Use double the minimum value of base current as a safety ON ON margin to ensure saturation. Vcc = 9 V, VCe(sa) = 0.3 V, Rc = 220 N, RB = 3.3 kQ, ßoc =50, and VLed = 1.6 V.
Q1:- find the emitter, base and collector currents and VE. (let any parameters if you need). + Vcc=6 V 2 k2 530 k2
........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration

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