1.4 Derive an expression for the resistivity of a semiconductor sample infinite in extent laterally and vertically measured with a square four-point probe with the probes spaced a distance s shown in Fig. P1.4. Current I enters probe 1 and leaves probe 4; voltage V is measured between probes 2 and 3. 1 2 3 Fig. P1.4 S

1.4 Derive an expression for the resistivity of a semiconductor sample infinite in extent laterally and vertically measured with a square four-point probe with the probes spaced a distance s shown in Fig. P1.4. Current I enters probe 1 and leaves probe 4; voltage V is measured between probes 2 and 3. 1 2 3 Fig. P1.4 S

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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