a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K
a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³ donors. Calculate the resistivity of the sample. b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate the resistivity of the compensated sample. c. Compute the resistivity of intrinsic silicon at room temperature. d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping required. μn or μp (cm²/V-sec) 1000 Electrons Holes NA or ND (cm³) 1x1014 Мет Mp (cm2V-sec) 1358 461 2 1357 460 100 5 1352 459 1 x 1015 1345 458 2 1332 455 5 1298 448 1 x 1016.... 1248 437 2 1165 419 5 986 378 1 x 1017 801 331 10 1014 1015 1016 NA or ND (cm-³) 1017 1018 Silicon T = 300 K
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Transcribed Image Text:a. A silicon sample maintained at room temperature is uniformly doped with ND=10¹6/cm³
donors. Calculate the resistivity of the sample.
b. The silicon sample of part (a) is "compensated" by adding NA=1016/cm³ acceptors. Calculate
the resistivity of the compensated sample.
c. Compute the resistivity of intrinsic silicon at room temperature.
d. A 500 resistor is to be made from a bar-shaped piece of n-type Si. The bar has a cross
sectional area of 102 cm² and a current-carrying length of 1 cm. Determine the doping
required.
μn or μp (cm²/V-sec)
1000
Electrons
Holes
NA or ND (cm³)
1x1014
Мет
Mp
(cm2V-sec)
1358
461
2
1357 460
100
5
1352
459
1 x 1015
1345
458
2
1332
455
5
1298
448
1 x 1016....
1248 437
2
1165 419
5
986 378
1 x 1017
801
331
10
1014
1015
1016
NA or ND (cm-³)
1017
1018
Silicon
T = 300 K
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