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QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.

QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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QUESTION 2 If we have silicon at 300K with 10 microns of p-type doping of 4.31*10^17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 78 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. 4.75*10^7 QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 5.29*10^15/cc, and forward bias of 0.63 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Click Save and Submit to save and submit. Click Save All Answers to save all answers.
Transcribed Image Text:QUESTION 2 If we have silicon at 300K with 10 microns of p-type doping of 4.31*10^17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 78 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. 4.75*10^7 QUESTION 3 What current in microamps do we get with an ideal abrupt junction silicon diode with (100 micron)^2 area and doped with acceptors at 7.5*10^15/cc, 1000 times more donor doping, and forward bias of 0.62 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. QUESTION 4 How many stored carriers are outside depletion region with an ideal abrupt junction silicon diode with (1 micron)^2 area and doped with acceptors and donors at 5.29*10^15/cc, and forward bias of 0.63 V. Assume e- & e+ mobilities of 1500 & 500 cm^2/(V*s), and minority carrier lifetimes of 1 microsecond. Vt=0.02585V, Answer should be to two significant digits with fixed point notation. Click Save and Submit to save and submit. Click Save All Answers to save all answers.
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