Answer the following questions:(a) The electron density for an intrinsic semiconductor was measured at (55 ●C)and was found to be (1.65 ×10'5) m³, While at (190° C) became (3.65 ×101º) m³,if we consider that Ee, Ey and E, are constants; find Eg for this material.(b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10")m3 .Determine the density of both electrons and holes for the silicon afterdoping, when the temperature is equal to (77° C) and (177° C) if the carrierdensity equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev).(c) Determine the position of the fermi level, with respect of the mid of energygap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10") m3, T =(350)ok andNo =(3.7×1025) m³.

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Answer the following questions: (a) The electron density for an intrinsic semiconductor was measured at (55 C) and was found to be (1.65 ×10!5) m³, While at (190° C) became (3.65 ×10'º) m³, if we consider that Ec, Ey and Eg are constants; find Eg for this material. (b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10º) m3 .Determine the density of both electrons and holes for the silicon after doping, when the temperature is equal to (77° C) and (177° C) if the carrier density equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev). (c) Determine the position of the fermi level, with respect of the mid of energy gap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10'') m³, T =(350)ok and N =(3,7x1025) m3. %3D %3D

Answer the following questions: (a) The electron density for an intrinsic semiconductor was measured at (55 C) and was found to be (1.65 ×10!5) m³, While at (190° C) became (3.65 ×10'º) m³, if we consider that Ec, Ey and Eg are constants; find Eg for this material. (b) A pure silicon Atoms was adopted with (AS) with density equal to (3.8×10º) m3 .Determine the density of both electrons and holes for the silicon after doping, when the temperature is equal to (77° C) and (177° C) if the carrier density equal to (1.25×10'5) m³³ at (77° C). Take Eg equal to (1.1 ev). (c) Determine the position of the fermi level, with respect of the mid of energy gap, for a pure semiconductor, if Eg = (2ev), n¡ = (1.65 ×10'') m³, T =(350)ok and N =(3,7x1025) m3. %3D %3D

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter1: Units, Trigonometry. And Vectors

Section: Chapter Questions

Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...

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Please help with question D
Consider a silicon pn junction at T= 300 K. Assume the doping concentration in the n region is 10 cm and the doping concentration in the p region is 10 cm, and assume that a forward bias of 0.30 V is applied to the pn junction. Note/ n, 1.5 x 10 em Calculate the minority carrier concentration at the edge of the space charge regions.
(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is n = 1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV i. Clearly Define n . ii. Write an expression for n (T) for Si. [in terms of Eg and T] Calculate n, for Si at OK. Calculate n, for Si at 500K.
A silicon wafer is oxidized in dry O2 at 1100 oC for 1 hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.6 μm more oxide in wet O2 at 1200 oC?
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A nondegenerate silicon sample at room temperature with a length of 2 cm is uniformly doped with boron (B) atoms. Electric field 5 V/cm produces a current density of 0.8 A/cm? through this sample. Sample cross-sectional area is 0.1 cm?. Hn= 4000cm2/V-s H,= 1000 cm?/V-s. Calculate the majority carrier concentration. Please write your answer as a cm-3 and don't use units in the answer.
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