A 200 mW laser beam with wavelength 2 = 632 nm is focused onto a direct bandgap semiconductor (E, = 1.8 eV) sample 10 um thick. The absorption coefficient of the semiconductor at this wavelength is 10° cm. (a) Find the total energy absorbed by the sample per second ? (b) Find the number of photons emitted per second by radiative recombination in the sample, assuming 100% quantum efficiency (i.e. each incident photon creates one electron-hole pair, and they spontaneously recombine) (c) What power is delivered to the sample as heat ?

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A 200 mW laser beam with wavelength 1 = 632 nm is focused onto a direct bandgap semiconductor (E; = 1.8 eV)
sample 10 um thick. The absorption coefficient of the semiconductor at this wavelength is 10° cm!.
(a) Find the total energy absorbed by the sample per second ?
(b) Find the number of photons emitted per second by radiative recombination in the sample, assuming 100%
quantum efficiency (i.e. each incident photon creates one electron-hole pair, and they spontaneously recombine)
(c) What power is delivered to the sample as heat ?
Transcribed Image Text:A 200 mW laser beam with wavelength 1 = 632 nm is focused onto a direct bandgap semiconductor (E; = 1.8 eV) sample 10 um thick. The absorption coefficient of the semiconductor at this wavelength is 10° cm!. (a) Find the total energy absorbed by the sample per second ? (b) Find the number of photons emitted per second by radiative recombination in the sample, assuming 100% quantum efficiency (i.e. each incident photon creates one electron-hole pair, and they spontaneously recombine) (c) What power is delivered to the sample as heat ?
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