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Platinum is deposited on n-type silicon substrate forming a Schottky diode. The me workfunction, m = 5.65 V, the electron affinity, x = 4.01 V, Np = 3 x 1016 cm-3, Nc = 2.86 × 1019 cm-3 and T = 300 K. Calculate, a) the barrier height, &Bn, b) the built in potential, Vpi,

Platinum is deposited on n-type silicon substrate forming a Schottky diode. The me workfunction, m = 5.65 V, the electron affinity, x = 4.01 V, Np = 3 x 1016 cm-3, Nc = 2.86 × 1019 cm-3 and T = 300 K. Calculate, a) the barrier height, &Bn, b) the built in potential, Vpi,

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Platinum is deposited on n-type silicon substrate forming a Schottky diode. The metal workfunction, om = 5.65 V, the electron affinity, x = 4.01 V, N, = 3 x 1016 cm-3, Nc = 2.86 x 1019 cm-3 and T = 300 K. Calculate, (a) the barrier height, ØBn, (b) the built in potential, Vpi, (c) the depletion width, W.
Transcribed Image Text:Platinum is deposited on n-type silicon substrate forming a Schottky diode. The metal workfunction, om = 5.65 V, the electron affinity, x = 4.01 V, N, = 3 x 1016 cm-3, Nc = 2.86 x 1019 cm-3 and T = 300 K. Calculate, (a) the barrier height, ØBn, (b) the built in potential, Vpi, (c) the depletion width, W.
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