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An intrinsic Si semiconductor sample has a length of L =100 um, at 300 K the sample is optically excited resulting in 1×10-" cm°excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of10 V, the change of sample resistance will be: O A. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohmns OD. 31.24 Ohms OE 3.239e5 Ohms

An intrinsic Si semiconductor sample has a length of L =100 um, at 300 K the sample is optically excited resulting in 1×10-" cm°excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of10 V, the change of sample resistance will be: O A. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohmns OD. 31.24 Ohms OE 3.239e5 Ohms

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An intrinsic Si semiconductor sample has a length of L=100 um, at 300 K the sample is optically excited resulting in 1×10- cm`excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of 10 V, the change of sample resistance will be: OA. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohms O D. 31.24 Ohms OE. 3.239e5 Ohms
Transcribed Image Text:An intrinsic Si semiconductor sample has a length of L=100 um, at 300 K the sample is optically excited resulting in 1×10- cm`excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of 10 V, the change of sample resistance will be: OA. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohms O D. 31.24 Ohms OE. 3.239e5 Ohms
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