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3. Calculate the thermal equilibrium electron and hole concentrations in Si at T=300K. of N. and Ny for Si Assume that Fermi energy is 0.25 eV below the conduction band. The values at T-300 K are 2,8 x 10¹9 cm ³ and 1,04 x 10¹⁹ cm³.

3. Calculate the thermal equilibrium electron and hole concentrations in Si at T=300K. of N. and Ny for Si Assume that Fermi energy is 0.25 eV below the conduction band. The values at T-300 K are 2,8 x 10¹9 cm ³ and 1,04 x 10¹⁹ cm³.

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on taraman gar comme mua Beneyin12. (1 = 300K) aliniz. 3. Calculate the thermal equilibrium electron and hole concentrations in Si at T= 300K. Assume that Fermi energy is 0.25 eV below the conduction band. The values of N. and Ny for Si at T-300 K are 2,8 x 10¹9 cm ³ and 1,04 x 10¹9 cm cm-³. 3.Si nin 300 K da termal denge electron ve hol konstrasyonunu hesaplayınız.fermi enerjinin iletkenlik bandının 0,25 eV altında olduğunu kabul ediniz. 300K de Ne ve N, değerleri 2,8 x 10¹⁹ cm³ ve 1,04 x 10¹⁹ cm³ tür. Doç.Dr. Sebahaddin ALPT
Transcribed Image Text:on taraman gar comme mua Beneyin12. (1 = 300K) aliniz. 3. Calculate the thermal equilibrium electron and hole concentrations in Si at T= 300K. Assume that Fermi energy is 0.25 eV below the conduction band. The values of N. and Ny for Si at T-300 K are 2,8 x 10¹9 cm ³ and 1,04 x 10¹9 cm cm-³. 3.Si nin 300 K da termal denge electron ve hol konstrasyonunu hesaplayınız.fermi enerjinin iletkenlik bandının 0,25 eV altında olduğunu kabul ediniz. 300K de Ne ve N, değerleri 2,8 x 10¹⁹ cm³ ve 1,04 x 10¹⁹ cm³ tür. Doç.Dr. Sebahaddin ALPT
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