3. Calculate the thermal equilibrium electron and hole concentrations in Si at T=300K. of N. and Ny for Si Assume that Fermi energy is 0.25 eV below the conduction band. The values at T-300 K are 2,8 x 10¹9 cm ³ and 1,04 x 10¹⁹ cm³.
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- 3 The Fermi-Dirac distribution provides the fraction of electrons that can be found for a given electron energy and temperature of the material. Silicon is a widely use semiconductor for computer processors and GPUs, with a band gap of 1.11 eV at room temperature (293 K). a) What is the Fermi energy of Silicon at room temperature? b) Calculate the electron concentration (total number of electrons) at 0.6 eV above the fermi level (in the conduction band) of one mol of silicon (each silicon atom contributes 4 electrons).41. Cohesive energy of bcc and fcc neon. Using the Lennard-Jones potetial, calculate the ratio of the cohesive energies of neon in the bcc and fcc structures (Ans. 0.958). The lattice sums for the bcc structures are Σ;pi12 = 9.11418; Σ;pij6 = 12.2533
- 31) Band Diagram and Carrier Concentration From the following band diagram of Si a. What are the equilibrium hole and electron concentration, po and no , at 300K? b. What is the doping? Give an example of a doping species? c. Repeat (a and b) for 500K? What is difference at higher temperature? d. Calculate Ef-Ev at 300K if the sample was Ge? What is the main difference?Q3:- A bar of p-type silicon, has a cross-sectional area A = 10.6 em2 and a length L= 1.2x10 cm. For an applied voltage of 4 V, a current of 3 mA is required. What is the required (a) resistance, (b) resistivity, and te) Impurity doping concentration? td) What is the resulting hole mobility3. Determine the following values based on the figure shown below of an NPN Si BJT, where NE 5×10¹8, NB= 10¹7, and Nc= 2×10¹6 cm³. Assuming the transistor is operated in the active mode with VBE=0.83 V. (a) Determine np(0) and pn(0). (b) If the effective base width W is 80 Å, D₂= 25 cm²/s, and the intrinsic emitter area is 0.5 mm², determine the total collector current. (c) If the current gain ß= 150, determine the base and emitter current. Carrier concentration Pao Emitter (n) Hole concentration EBJ depletion. region Pr (0) (0) 11 Base (p) Electron concentration np (ideal) n (with recombination) Effective base width W CBJ depletion region Collector (n) Distance (x)
- 4. Consider a simple cubic system with lattice constant a = 5 Å. Determine the atom density (atoms/cm²) for the (100), (110), and (111) planes.4. If a kind of particles obeys the following dispersion -Dpa, what is the density of states (three dimensions)?3. How many electrons in one bit? Do an order of magnitude estimate of a transistor (say, 5nm long gate, 10nm deep into the silicon, 1um wide. See the illustration above) You may assume each silicon atom contributes one electron.