2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!! em?, the oxide layer thickness is 50 nm. (1) What is the flat-band voltage, VFB, of the MOSFET? (2) What is the threshold voltage, Vr, of this transistor?

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2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!!
cm?, the oxide layer thickness is 50 nm.
(1) What is the flat-band voltage, VFB, of the MOSFET?
(2) What is the threshold voltage, Vr, of this transistor?
Transcribed Image Text:2. In n-channel n"-polycrystalline Si-SiO2-Si MOS transistor N, = 2 x 1016 cm, Qavq = 2 x 10!! cm?, the oxide layer thickness is 50 nm. (1) What is the flat-band voltage, VFB, of the MOSFET? (2) What is the threshold voltage, Vr, of this transistor?
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