C! A new semiconductor material is to be p-type and doped with 5x10¹ cm' acceptor atoms. Assume complete ionization and assume N. 0. The effective density of states functions are N-1.2x 10¹ cm"¹ and N- 1.8x10¹ cm¹ at T-300 K. A special semiconductor device fabricated with this material requires that the hole concentration be no greater than 5.08x10¹ cm at 7 band gap energy required in this new material? T 350 K. What is the minimum
C! A new semiconductor material is to be p-type and doped with 5x10¹ cm' acceptor atoms. Assume complete ionization and assume N. 0. The effective density of states functions are N-1.2x 10¹ cm"¹ and N- 1.8x10¹ cm¹ at T-300 K. A special semiconductor device fabricated with this material requires that the hole concentration be no greater than 5.08x10¹ cm at 7 band gap energy required in this new material? T 350 K. What is the minimum
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Transcribed Image Text:C! A new semiconductor material is to be p-type and doped with 5x10¹ cm" acceptor atoms. Assume
complete ionization and assume N-0. The effective density of states functions are N-1.2x 10¹ cm²¹
and №.- 1.8x10¹ cm¹ at T-300 K. A special semiconductor device fabricated with this material
requires that the hole concentration be no greater than 5.08x10 cm at T 350 K. What is the minimum
band gap energy required in this new material?
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