Consider silicon at T = 300 K. A Hall effect device is fabricated with the follow- ing geometry: d = 5 x 10-³ cm, W = 5 x 10-² cm, and L = 0.50 cm. The electri- cal parameters measured are: I, = 0.50 mA, V, 1.25 V, and B₂ = 650 gauss 6.5 x 10-2 tesla. The Hall field is E= -16.5 mV/cm. Determine (a) the Hall = = voltage, (b) the conductivity type, (c) the majority carrier concentration, and (d) the majority carrier mobility.
Consider silicon at T = 300 K. A Hall effect device is fabricated with the follow- ing geometry: d = 5 x 10-³ cm, W = 5 x 10-² cm, and L = 0.50 cm. The electri- cal parameters measured are: I, = 0.50 mA, V, 1.25 V, and B₂ = 650 gauss 6.5 x 10-2 tesla. The Hall field is E= -16.5 mV/cm. Determine (a) the Hall = = voltage, (b) the conductivity type, (c) the majority carrier concentration, and (d) the majority carrier mobility.
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Transcribed Image Text:5.49 Consider silicon at T = 300 K. A Hall effect device is fabricated with the follow-
ing geometry: d = 5 x 10-³ cm, W = 5 x 10-² cm, and L = 0.50 cm. The electri-
cal parameters measured are: I, = 0.50 mA, V. = 1.25 V, and B₂ = 650 gauss =
6.5 x 10-² tesla. The Hall field is EH = -16.5 mV/cm. Determine (a) the Hall
voltage, (b) the conductivity type, (c) the majority carrier concentration, and (d) the
majority carrier mobility.
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