(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is n=1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV i. Clearly Define n j. iii. Write an expression for n.(T) for Si. [in terms of Eg and T] Calculate n, for Si at OK. Calculate n, for Si at 500K.
(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is n=1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV i. Clearly Define n j. iii. Write an expression for n.(T) for Si. [in terms of Eg and T] Calculate n, for Si at OK. Calculate n, for Si at 500K.
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![(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is
n = 1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV
i.
Clearly Define n
.
ii.
Write an expression for n (T) for Si. [in terms of Eg and T]
Calculate n, for Si at OK.
Calculate n, for Si at 500K.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Ff7872937-0d27-465a-8d0d-46f2be8cc00a%2Fd007453e-b181-4420-900f-877b3cb530e2%2Fdlqdzy_processed.jpeg&w=3840&q=75)
Transcribed Image Text:(b) For Silicon at room temperature (300 K) the intrinsic carrier concentration is
n = 1 x 10¹0 carriers/cm³ and the width of the forbidden gap is Eg = 1.12 eV
i.
Clearly Define n
.
ii.
Write an expression for n (T) for Si. [in terms of Eg and T]
Calculate n, for Si at OK.
Calculate n, for Si at 500K.
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