4.) (Based on Neaman, Problem 7.6) - A silicon pn junction at 300K is doped such that Ec EF = 0.21 eV in the n region, and EF - Ey = 0.18 eV in the p region. (a) Draw the energy band diagram of the pn junction. (b) Determine the impurity doping concentrations in each region (c) Determine the built-in potential barrier.
4.) (Based on Neaman, Problem 7.6) - A silicon pn junction at 300K is doped such that Ec EF = 0.21 eV in the n region, and EF - Ey = 0.18 eV in the p region. (a) Draw the energy band diagram of the pn junction. (b) Determine the impurity doping concentrations in each region (c) Determine the built-in potential barrier.
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Transcribed Image Text:4.) (Based on Neaman, Problem 7.6) - A silicon pn junction at 300K is doped such that
Ec Ep = 0.21 eV in the n region, and EF - Ey = 0.18 eV in the p region.
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(a) Draw the energy band diagram of the pn junction.
(b) Determine the impurity doping concentrations in each region
(c) Determine the built-in potential barrier.
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